Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:06:26.049Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Holography as a Tool for Dopant Profile Characterization of Semiconductor Devices

Published online by Cambridge University Press:  01 February 2011

Takao Matsumoto  and
Masanari Kouguchi
Takao Matsumoto
Affiliation:
Advanced Measurement and Analysis Center, Central Research Laboratory, Hitachi, Ltd., 1–280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185–8601, Japan
Masanari Kouguchi
Affiliation:
Advanced Measurement and Analysis Center, Central Research Laboratory, Hitachi, Ltd., 1–280, Higashi-Koigakubo, Kokubunji-shi, Tokyo 185–8601, Japan
Get access

Abstract

We used electron holography to analyze the dopant profile in a MOS transistor. The overall performance of the holography electron microscope at our laboratory has been confirmed by recording a maximum of 16, 000 numbers of electron interference fringes on a conventional electron microscope film. For thin film specimen preparation, we have developed an FIB system with a modified beam scanning scheme in which a high-frequency analog modulation signal is added to the digital signal of the beam deflector. This has enabled us to smooth the residual surface roughness presumably caused by the glitch-noise of D/A converter and we proved that a nearly atomically smooth surface was obtained as estimated with an AFM and TEM. We used this optimized system to characterize the dopant profile in MOS transistors, and comparisons with the calculated profiles from device simulator have proved that they are in good agreement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 839: Symposium P – Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry, and Structure , 2004 , P5.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tonomura, A., Rev. Mod. Phys. 59, 639 (1987).Google Scholar
2. Rau, W. D., Schwander, P., Baumann, F. H., Hoppner, W., and Ourmazd, A., Phys. Rev. Lett. 82, 2614 (1999).Google Scholar
3. Gribelyuk, M. A., McCartney, M. R., Li, Jing, Murthy, C. S., Ronsheim, P., Doris, B., McMurray, J. S., Hegde, S., and Smith, David J., Phys. Rev. Lett. 89, 025502 (2002).Google Scholar
4. Wang, Y. Y., Kawasaki, M., Bruley, J., Gribelyuk, M., Domenicucci, A., and Gaudiello, J., Ultramicroscopy 101, 63 (2004).Google Scholar
5. Beleggia, M., Fazzini, P. F., Merli, P.G., and Pozzi, G., Phys. Rev. B 67, 045328 (2003)Google Scholar
6. Akashi, T., Harada, K., Matsuda, T., Kasai, H., Tonomura, A., Furutsu, T., Moriya, N., Yoshida, T., Kawasaki, T., Kitazawa, K., and Koinuma, H., Appl. Phys. Lett. 81, 1922 (2002).Google Scholar
7. Tonomura, A., Matsuda, T., and Komoda, T., Jpn. J. Appl. Phys. 17, 1137 (1978).Google Scholar
8. Matsumoto, T., to be published.Google Scholar