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Electron Energy Distributions During Pulsed Laser Annealing and Damage of Silicon

Published online by Cambridge University Press:  15 February 2011

R. T. Williams ,
M. N. Kabler ,
J. P. Long ,
J. C. Rife  and
T. R. Royt
R. T. Williams
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375USA
M. N. Kabler
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375USA
J. P. Long
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375USA
J. C. Rife
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375USA
T. R. Royt
Affiliation:
Naval Research Laboratory, Washington, D. C. 20375USA
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Abstract

Spectra of photoelectrons and thermionic electrons emitted from silicon during pulsed laser irradiation at energy densities encompassing the thresholds for laser annealing and damage are reported. Annealing is accomplished with a 90-nsec pulse of 532-nm light, which may be accompanied by a 266-nm probe pulse. A cylindrical mirror analyzer is used for energy resolution of emitted electrons. Time-resolved reflectivity at 633 nm verifies attainment of the high-reflectivity annealing phase. Spectral widths and total yields imply a modest electron temperature (T < 3000 K) during annealing. The data suggest that the work function of the silicon (111) face may increase about 0.6 eV upon transition to the molten phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 97
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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