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Electron Emission from Gated Diamond Emitter Array

Published online by Cambridge University Press:  10 February 2011

Seung -Chul Ha ,
Dae-Hwan Kang ,
Byung-Sung Kim ,
Seok-Hong Min  and
Ki-Bum Kim
Seung -Chul Ha
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Dae-Hwan Kang
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Byung-Sung Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Seok-Hong Min
Affiliation:
Research Institute of Advanced Materials, Seoul National University, Seoul, 151-742, Korea
Ki-Bum Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
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Abstract

A novel processing sequence for the formation of gated diamond field emitter arrays (triode system) is proposed and the feasibility is tested by investigating the field emission property. The processing scheme is based on the selective deposition of diamond using the well established nucleation enhanced process on silicon substrate, so called bias enhanced nucleation (BEN). Selective deposition of diamond using the same process was also demonstrated on titanium nitride (TIN) electrode layer. Our preliminary results show that the diamond field emitter is turned on at around 97 V/μm with the current level of about several μA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 77
Copyright
Copyright © Materials Research Society 1998

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