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Electron Emission from Diamond (111) p+-i-n+ Junction Diode

Published online by Cambridge University Press:  31 January 2011

Daisuke Takeuchi ,
Toshiharu Makino ,
Hiromitsu Kato ,
Masahiko Ogura ,
Norio Tokuda ,
Kazuhiro Oyama ,
Tsubasa Matsumoto ,
Izumi Hirabayashi ,
Hideyo Okushi  and
Satoshi Yamasaki
Daisuke Takeuchi
Affiliation:
[email protected]@gmail.com, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Toshiharu Makino
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Hiromitsu Kato
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Masahiko Ogura
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Norio Tokuda
Affiliation:
[email protected], Kanazawa University, Kanazawa, Japan
Kazuhiro Oyama
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Tsubasa Matsumoto
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Izumi Hirabayashi
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Hideyo Okushi
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
Satoshi Yamasaki
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan
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Abstract

We successfully observed electron emission from hydrogenated diamond (111) p+-i-n+ junction diodes. Here, p+- and n+-layers mean that the boron and phosphorous impurity concentrations in these layers are around 1020 cm-3. Then the p+-layer on top of the diode suppresses electron emission from the top-surface area. The heavily doped layers also play an important role to obtain high diode and emission currents. The emission started when the applying bias voltage was equal to the built-in potential, and the emission current reached to over 1 μA at room temperature operation. With taking into account our previous photoemission yield spectroscopy results and with the very high binding energy of free excitons of 80 meV in diamond, we suggested that the electron emission was derived from free excitons generated in the i-layer of the diodes.

Keywords

diamondelectrical propertiesdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1203: Symposium J – Diamond Electronics and Bioelectronics-Fundamentals to Applications III , 2009 , 1203-J14-05
Copyright
Copyright © Materials Research Society 2010

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References

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