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Electron Diffraction Analysis of the Structure of SiO2 Gel-Film

Published online by Cambridge University Press:  28 February 2011

Hisashi Ohsaki ,
Michel A. Aegerter  and
Takaki Shichiri
Hisashi Ohsaki
Affiliation:
Universidade de São Paulo, Instituto de Fisica e Quimica de São Carlos, São Carlos 13560, Brazil.
Michel A. Aegerter
Affiliation:
Universidade de São Paulo, Instituto de Fisica e Quimica de São Carlos, São Carlos 13560, Brazil.
Takaki Shichiri
Affiliation:
Osaka City University, Department of Physics, Faculty of Science, Sumiyoshi-ku, Osaka 558, Japan.
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Abstract

The structure of self-supported SiO2 gel-films prepared from acid and basic TEOS solutions is analysed by high energy transmission electron diffraction method. The reduced radial distribution function (RDF) curves show that all the films are already well dense despite the low drying temperature (≤50°C) and short drying time (≤30 s). The Si-O bond length of the gelfilms prepared from highly acid and basic solutions is about 1.58 Å; it is smaller than that of bulk vitreous silica (1.61 Å) but similar to that of BO Å thick evaporated a-SiO2 film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 180: Symposium A – Better Ceramics Through Chemistry IV , 1990 , 429
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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