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Electron Cyclotron Resonance Hydrogenation of Poly-Si Thin Film Transistors on SiO2/Si Substrates
Published online by Cambridge University Press: 16 February 2011
Abstract
We report the results of an ECR hydrogenation time-behavior study on polycrystalline silicon thin film transistors. The device characteristics, such as mobility, subthreshold slope, threshold voltage, off current and on/off current ratio, were measured as a function of the passivation time. It was found that there is an optimal passivation time for this particular TFT structure, and overexposure to ECR hydrogen plasma may cause the degradation of some device parameters.
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- Copyright © Materials Research Society 1991
References
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