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Electron Channeling Pattern: A Tool for Studying YBaCuO-HTSC Thin Films

Published online by Cambridge University Press:  26 February 2011

K. H. Young ,
J. Z. Sun ,
T. W. James  and
B. J. L. Nilsson
K. H. Young
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, CA 93111
J. Z. Sun
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, CA 93111
T. W. James
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, CA 93111
B. J. L. Nilsson
Affiliation:
Superconductor Technologies Inc., 460-F Ward Drive, Santa Barbara, CA 93111
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Abstract

High Tc superconducting (HTSC) films synthesis for demanding applications requires epitaxial c-axis growth without high angle grain boundaries. Electron channeling pattern (ECP) analysis using a scanning electron microscope is a non-destructive, fast, direct,and economical tool to determine the orientation and crystallinity of epitaxial films. We have successfully employed this technique to examine our in-situ laser ablated YBa2Cu307−δ superconducting thin films grown on LaAI03 (100) substrates. By changing the energy of the incident electron beam, we can also monitor the film quality vs. depth. The surface bending of YBa2Cu3O7−δ thin films due to the cubic-rhombohedral transition of LaAI03 substrates is also visiblewhen sharp ECPs are present. For films with rough surfaces, the ECP contrast is obscured by unwanted contrast arising from surface features. This unwanted contrast can be minimized by defocusing the electron beam.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 831
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Dimos, D., Chaudhari, P., and Mannhart, J., Phys. Rev. B 41, 4038 (1990)Google Scholar
[2] For example, Wu, X. D., Muenchausen, R. E., Foltyn, S., Estler, R. C., Dye, D. C., Flamme, C., Nogar, N. S., Garcia, A R., Martin, J., and Tesmer, J., Appl. Phys. Lett. 56, 1481 (1990)Google Scholar
[3] For example, Mukherjee, P. S., Simon, A., and Damodaran, A. D., J. Mat. Sci. Lett. 8, 981 (1989)Google Scholar
[4] Knorr, D. B., Livingston, J. D., Supercond. Sci. Technol. 1, 302 (1989).CrossRefGoogle Scholar
4a. He, Y. -L., Wang, G. -C., Drehman, A. J., Jin, H. -S., J. Appi. Phys. 67, 7460 (1990)Google Scholar
[5] Eibl, O. and Roas, B., J. Mater. Res. 5, 2620 (1990)CrossRefGoogle Scholar
[6] Ramesh, R., Hwang, D. M., Barner, J. B., Nazar, L., Ravi, T. S., Inam, A., Dutta, B., Wu, X. D.,and Venkatesan, T., J. Mater. Res. 5, 704 (1990)CrossRefGoogle Scholar
[7] For example,Linberg, P. A. P., Shen, Z.-X., Wells, B. O., Mitzi, D. B., Lindau, I., Spicer, W. E., and Kapitulnik, A., Appl. Phys. Lett. 53, 2563 (1988)Google Scholar
[8] Terashima, T., Iijima, K., Yamamoto, K., Hirata, K., Bando, Y., and Takada, T., Jpn. J.Appl. Phys. 28, L987 (1989)Google Scholar
[9] For principle of ECP, see Practical Scanning Electron Microscopy. ed. Goldstein, J. I. and Yakowitz, H., Plenum Press, New York, p149–179 (1975)Google Scholar
[10] Sun, J. Z., Young, K. H., James, T. W., and Hammond, R. B. (submitted to 1991 APS)Google Scholar
[11] Young, K. H., James, T. W. and Kapolnek, D. (to be submitted)Google Scholar