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Electron Beam Processing of Semiconductors

Published online by Cambridge University Press:  15 February 2011

B. Ahmed  and
R.A. McMahon
B. Ahmed
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 IPZ
R.A. McMahon
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, England, CB2 IPZ
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Abstract

Electron beams can transfer energy very efficiently to semiconductors. Systems have been developed for rapid heating to temperature around 1000°C under a variety of conditions from adiabatic to isothermal. Pulsed, focused, line and synthesized shaped beams are used to obtain a wide range of thermal cycles. The following applications are described: the annealing of ion-implanted Si, particularly the activation of As implants and shallow implants (Rp<150Å), the annealing of Si and Se in GaAs, the e-beam processing of implanted silicon devices and the improvement of SOS substrate quality. Localized annealing by a computer controlled e-beam and the recrystallization of deposited films on insulators are also considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 653
Copyright
Copyright © Materials Research Society 1983

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References

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