Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:45:48.307Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

Published online by Cambridge University Press:  21 March 2011

A. Hangleiter ,
S. Lahmann ,
C. Netzel ,
U. Rossow ,
P. R. C. Kent  and
A. Zunger
A. Hangleiter
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
S. Lahmann
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
C. Netzel
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
U. Rossow
Affiliation:
Institut für Technische Physik, Technische Universität Braunschweig, Mendelssohnstr. 2, D-38106 Braunschweig, Germany
P. R. C. Kent
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401-3393, U.S.A. E-mail: [email protected]
A. Zunger
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401-3393, U.S.A. E-mail: [email protected]
Get access

Abstract

We show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I7.2.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Walle, C. G. V. de and Neugebauer, J., Appl. Phys. Lett. 70, 2577 (1997).Google Scholar
2. Bellaiche, L., Mattila, T., Wang, L.-W., Wei, S.-H., and Zunger, A., Appl. Phys. Lett. 74, 1842 (1999).Google Scholar
3. Bellaiche, L., Wei, S.-H., and Zunger, A., Appl. Phys. Lett. 70, 3558 (1997).Google Scholar
4. Im, J. S., Kollmer, H., Off, J., Scholz, F., and Hangleiter, A., Mat. Sci. Eng. B. 59B, 315 (1999).Google Scholar
5. Im, J. S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., and Hangleiter, A., Phys. Rev. B 57, R9435 (1998).Google Scholar
6. Martin, G., Botchkarev, A., Rockett, A., and Morkoç, H., Appl. Phys. Lett. 68, 2541 (1996).Google Scholar
7. Rizzi, A., Lantier, R., Lth, H., Sala, F. della, Carlo, A. di, and Lugli, P., J. Vac. Sci. Technol. B 17, 1674 (1999).Google Scholar
8. Manz, C., Kunzer, M., Obloh, H., Ramakrishnan, A., and Kaufmann, U., Appl. Phys. Lett. 74, 3993 (1999).Google Scholar
9. Baur, J., Maier, K., Kunzer, M., Kaufmann, U., and Schneider, J., Appl. Phys. Lett. 65, 2211 (1994).Google Scholar
10. Hang, D. R., Chen, C. H., Chen, Y. F., Jiang, H. X., and Lin, J. Y., J. Appl. Phys. 90, 1887 (2001).Google Scholar
11. Wei, S.-H. and Zunger, A., Appl. Phys. Lett. 69, 2719 (1996).Google Scholar
12. Walle, C. G. van de and Neugebauer, J., Appl. Phys. Lett. 70, 2577 (1997).Google Scholar
13. Takeuchi, T., Sota, S., Katsuragawa, M., Komori, M., Takeuchi, H., Amano, H., and Akasaki, I., Jpn. J. Appl. Phys. 36, L382 (1997).Google Scholar
14. Bernardini, F., Fiorentini, V., and Vanderbilt, D., Phys. Rev. B 56, R10024 (1997).Google Scholar
15. McCluskey, M. D., Walle, C. G. van de, Master, C. P., Romano, L. T., and Johnson, N. M., Appl. Phys. Lett. 72, 2725 (1998).Google Scholar
16. Hangleiter, A., Im, J. S., Kollmer, H., Heppel, S., Off, J., and Scholz, F., MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).Google Scholar
17. Wetzel, C., Takeuchi, T., Yamaguchi, S., Katoh, H., Amano, H., and Akasaki, I., Appl. Phys. Lett. 73, 1994 (1998).Google Scholar