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Electromigration in Bicrystal Al Lines

Published online by Cambridge University Press:  15 February 2011

Hai P. Longworth  and
C. V. Thompson
Hai P. Longworth
Affiliation:
IBM Corp., Technology Products Division, E. Fishkill Facility, Dpt. 295, Z/35A, Hopewell Jct., NY 12533
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have developed a new experimental technique to study electromigration in bicrytal Al lines as a function of the type and location of the grain boundary as well as the testing temperature. The failure times of these lines are found to be lognormally distributed. The median time to failure (MTTF) depends more strongly on the boundary orientation than the type of grain boundary. The dependence of lifetimes on the type and orientation of grain boundaries, the location and appearance of the failure sites, and the measured activation energy (E.) of 0.94eV suggest that both interfacial and grain boundary diffusion contribute to failure in bicrystal lines, and likely in bamboo and near-bamboo lines as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 95
Copyright
Copyright © Materials Research Society 1992

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References

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