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Electromigration Damage Studied by 1/f Noise

Published online by Cambridge University Press:  15 February 2011

K. Dagge
K. Dagge*
Affiliation:
Max-Planck-Institut fiir Metallforschung, Institut fur Physik, Heisenbergstr. 1, D-70569 Stuttgart, Germany, e-mail: noiseQphysx4.mpi-stuttgart.mpg.de
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Abstract

Thin polycrystalline aluminum films were investigated by high-resolution ac noisemeasurements before and after damaging by high direct current. Immediately after the interruption of the dc-stress a transient noise component was observed that was inversely proportional to the square of the frequency f (1/f2 -noise). It was caused by discrete jumps in the resistance presumably due to the relaxation of mechanical stress. The second component of noise was stable and in all cases approximately proportional to 1/f. The spectral density of 1/f-noise showed characteristic discrete steps as a function of damaging time, in contrast to the resistance which increased almost continuously up to the failure of the film. This indicates that nucleation-and-growth processes of mobile defects were observed in the noise measurements. Thus noise measurements might help to understand the microscopic process of electromigration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 147
Copyright
Copyright © Materials Research Society 1996

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