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Electromigration Characteristics of Cu and Al Interconnections

Published online by Cambridge University Press:  22 February 2011

S. Shingubara ,
K. Fujiki ,
A. Sano ,
H. Sakaue  and
Y. Horiike
S. Shingubara
Affiliation:
Hiroshima University, Dept. of Electrical Engineering Kagamiyama 1-4-1, Higashi-Hiroshima,724, Japan
K. Fujiki
Affiliation:
Hiroshima University, Dept. of Electrical Engineering Kagamiyama 1-4-1, Higashi-Hiroshima,724, Japan
A. Sano
Affiliation:
Hiroshima University, Dept. of Electrical Engineering Kagamiyama 1-4-1, Higashi-Hiroshima,724, Japan
H. Sakaue
Affiliation:
Hiroshima University, Dept. of Electrical Engineering Kagamiyama 1-4-1, Higashi-Hiroshima,724, Japan
Y. Horiike
Affiliation:
Hiroshima University, Dept. of Electrical Engineering Kagamiyama 1-4-1, Higashi-Hiroshima,724, Japan
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Abstract

Electromigration activation energies (Ea) of Al and Cu interconnections are strongly dependent on the grain boundary morphology, and it is pointed out that Ea of bamboo-like Al interconnection is not less than Ea of small grain Cu interconnections. Small resistance oscillatory changes caused by electromigration, which are classified into three categories; oscillation, downward spikes, and upward spikes, are investigated in detail. It seems most likely that oscillations correspond to annihilation and formation of the one void. It is also pointed out that downward spikes are local, while upward spikes are non-local. Dislocation dynamics such as generation, rapid transport and subsequent annihilation are considered to be origins of spikes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 441
Copyright
Copyright © Materials Research Society 1994

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References

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