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Electroluminescent Devices with Nanostructured ZnS:Mn Emission Layer Operated at 20 V0-p

Published online by Cambridge University Press:  14 March 2011

Toshihiko Toyama ,
Daisuke Adachi  and
Hiroaki Okamoto
Toshihiko Toyama
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
Daisuke Adachi
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
Hiroaki Okamoto
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
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Abstract

We have developed a new type of a thin-film electroluminescence (TFEL) device with nano- structured (NS)-ZnS:Mn utilizing its enhanced luminescent efficiency due to the quantum confinement (QC) effects. As NS-ZnS:Mn, ZnS:Mn/Si3N4 multilayers with thicknesses of 1.9–3.5 nm for ZnS were prepared by a rf-magnetron sputtering method. From the results of grazing incidence X-ray reflectometry and X-ray diffractmetry, formation of ZnS:Mn nanocrystals in the ZnS layers are confirmed. With a decrease in the ZnS:Mn layer thickness, the photoluminescence (PL) efficiency associated with the Mn2+ transitions is increased, and the PL excitation spectrum is shifted toward higher energies, indicating appearance of the QC effects. As the results of the application of NS-ZnS:Mn to the emission layer of the TFEL device, we have successfully observed reddish-orange emission above the threshold voltage of 12 V0-p, and the maximum luminance is 3.0 cd/m2 operated with the 1-kHz sinusoidal voltage of 20 V0-p.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q4.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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