Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T19:29:31.497Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroluminescence From μc-SiC / Porous Si PN Junctions

Published online by Cambridge University Press:  25 February 2011

H. Mimura ,
T. Futagi ,
T. Matsumoto ,
Y. Ohta ,
K. Kitamura  and
Y. Kanemitsu
H. Mimura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
T. Futagi
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
T. Matsumoto
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
Y. Ohta
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
K. Kitamura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 1618 Ida, Nakahara-ku, Kawasaki 211, Japan
Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, lbaraki 305, Japan
Get access

Abstract

We have measured electrical properties and electroluminescence (EL) characteristics of the light-emitting diode (LED) based on a pn junction of n-type microcrystalline silicon carbide (μc-SiC) and porous silicon (PS). The μc-SiC/PS pn junctions showed rectification behavior, and a uniform red EL was observed at a forward voltage larger than 15V. From the relationship between the EL intensity and the forward current, the EL mechanism is interpreted as the recombination of electron-hole pairs doubly injected into the PS layer. No degradation was observed in the EL intensity during the measurements over 8 hours. These results means that μc-SiC serves well as a electron injector to the PS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 385
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).CrossRefGoogle Scholar
[2] Tsai, C., Li, K-H., Sarathy, J., Shih, S., Campbell, J.C., Hance, B.K., and White, J.M., Appl. Phys. Lett. 59, 2814 (1991).Google Scholar
[3] Koyama, H., Araki, M., Yamamoto, Y. and Koshida, N., Jpn.J.Appl.Phys. 30, 3606 (1992).CrossRefGoogle Scholar
[4] Futagi, T., Katsuno, M., Ohtani, N., Ohta, Y., Mimura, H., and Kawamura, K., Appl. Phys. Lett. 58, 2948 (1991).Google Scholar
[5] Mimura, H., Katsuno, M., Futagi, T., Ohta, Y., Kitamura, K., in 10th Symp. Photoelectronic Image Devices, London 1991 (lOP Pub., Bristol, 1992) p.371–376.Google Scholar
[6] Futagi, T., Matsumoto, T., Katsuno, M., Ohta, Y., Mimura, H. and Kitamura, K., MRS Symp. on Microcrystalline Semiconductors: Materials Science and Devices, F21.4 Boston, Dec.4, 1992.Google Scholar
[7] Maruska, H.P., Namavar, E. and Kalkhoran, N.M., Appl. Phys. Lett. 61, 1338 (1992).CrossRefGoogle Scholar
[8] Futagi, T., Matsumoto, T., Katsuno, M., Ohta, Y., Mimura, H., and Kitamura, K., Jpn. J. Appl. Phys. 31, L616 (1992).CrossRefGoogle Scholar