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Electroluminescence from 4H-SiC Schottky Diodes

Published online by Cambridge University Press:  21 March 2011

F. H. C. Carlsson ,
Q. ul-Wahab ,
J. P. Bergman  and
E. Janzén
F. H. C. Carlsson
Affiliation:
Dept. of Phys. and Meas. Tech., Materials Science, Linköping University, SE-581 83 Linköping. Sweden
Q. ul-Wahab
Affiliation:
Dept. of Phys. and Meas. Tech., Materials Science, Linköping University, SE-581 83 Linköping. Sweden
J. P. Bergman
Affiliation:
Dept. of Phys. and Meas. Tech., Materials Science, Linköping University, SE-581 83 Linköping. Sweden
E. Janzén
Affiliation:
Dept. of Phys. and Meas. Tech., Materials Science, Linköping University, SE-581 83 Linköping. Sweden
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Abstract

We have observed electroluminescence from 4H-SiC Ni-Schottky diodes on 1015cm−3 nitrogen doped n-type epilayers. A high barrier Schottky contact will form an inversion layer close to it. This creates minority carriers that can be injected into the epi and recombine to emit light. The spectral composition and its temperature dependence have been investigated from liquid He temperatures to room temperature. Band edge luminescence, Al related luminescence and DI bound exciton have been observed. To study the electroluminescence from Schottky diodes provides an easy and additional technique for defect characterization of epitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H4.8
Copyright
Copyright © Materials Research Society 2001

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References

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