Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:32:06.732Z Has data issue: false hasContentIssue false
  • English
  • Français

Electroluminescence Device Perspectives of Si+-Implanted SiO2

Published online by Cambridge University Press:  15 February 2011

F. Kozlowski ,
H. E. Porteanu ,
V. Petrova-Koch  and
F. Koch
F. Kozlowski
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
H. E. Porteanu
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
V. Petrova-Koch
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
F. Koch
Affiliation:
Technische Universität München, Physik-Department E 16, D-85747 Garching, Germany
Get access

Abstract

Thermal oxide layers on Si which have been implanted with Si conduct electrical current and emit light. The electroluminescence effect (EL) has an efficiency which is comparable to the best values that have been reported for the porous Si based devices. Generally, the EL spectrum differs substantially from the photoexcited luminescence. It is linked with that excited by external high energy electrons in cathodoluminescence (CL) experiments. We suggest to consider the effect as internal CL. Based on studies of transport and EL characteristic we evaluate the possibilities of an electroluminescent device based on such layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 657
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Shimizu-Iwayama, T., Nakao, S., Saitoh, K., Appl. Phys. Lett. 65, 1814 (1994).Google Scholar
2.Mutti, P., Ghislotti, G., Bertoni, S., Bonoldi, L., Cerofolini, G.F., Meda, L., Grilli, E., Guzzi, M., Appl. Phys. Lett. 66, 851 (1995).Google Scholar
3.Atwater, H.A., Sheglov, K.V., Vahala, K.J., Flayan, R.C., Brougersma, M.L., Polman, A., MRS Proc. 316, 409 (1994).Google Scholar
4.Fischer, T., Petrova-Koch, V., Sheglov, K., Brandt, M.S. and Koch, F., Thin Solid Films, 276, 100(1996).Google Scholar
5.Petrova-Koch, V., Fischer, T., Sheglov, K., Brandt, M.S. and Koch, F., Int. Symp. Advanced Lum. Mat., Electrochem. Soc., Chicago 1995.Google Scholar
6.Petrova-Koch, V., Muschik, T., Fischer, T., and Fojtik, A., in: Optics of Small Particles, Interfaces and Surfaces, Hummel, R. (editor), 1995.Google Scholar
7.DiMaria, D.J., Kirtley, J.R., Pakulis, E.J., Dong, D.W., Kuan, T.S., Pesavento, F.L., Theis, T.N., Cutro, J.A., Brorson, S.D., J. Appl. Phys. 56, 401 (1984).Google Scholar
8.Steiner, P., Kozlowski, F., Lang, W., Appl. Phys. Lett. 62, 2700 (1993).Google Scholar
9.Loni, A., Simons, A.J., Cox, T.I., Calcott, P.D.J., Canham, L.T., Electronics Letter, 31, 1288 (1995).Google Scholar
10.Tsybeskov, L., Moore, K.L., Duttagupta, S.P., Hirschman, K.D., Hall, D.G., Fauchet, P.M., Appl. Phys. Lett. 69, 3411 (1996).Google Scholar
11.Lalic, N., Linnros, J., E- MRS Spring Meeting, Strassbourg, France, May 22–26, 1995.Google Scholar
12.Steiner, P., Kozlowski, F., Wielunski, M., Lang, W., Jpn. J. Appl. Phys. 33, 6675 (1994).Google Scholar
13.Schuster, T., Dittrich, T., Porteanu, H.E., Fischer, T., Hechtl, E., Petrova-Koch, V., Koch, F., “Improvement of the luminescing behavior of Si+-implanted SiO2 films”, this volume.Google Scholar