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Electroluminescence and Transport in a-Si:H p-i-n Diodes at Room Temperature

Published online by Cambridge University Press:  01 January 1993

R. Carius ,
F. Becker ,
H. Wagner  and
J.-Th. Zettler
R. Carius
Affiliation:
Forschungszentmm Jülich, ISI-PV, Jülich
F. Becker
Affiliation:
Forschungszentmm Jülich, ISI-PV, Jülich
H. Wagner
Affiliation:
Forschungszentmm Jülich, ISI-PV, Jülich
J.-Th. Zettler
Affiliation:
TU Berlin, Germany
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Abstract

The transport and recombination of injected electrons and holes in a-Si:H p-i-n-solar cells is studied by simultaneous detection of electroluminescence and forward current, both steady state and time resolved. We have calculated the spatial distribution of the radiative recombination in the layer using an optical model that takes into account all layers of the solar cell as well as the substrate and the back contact. The validity of the results has successfully been tested by photoluminescence measurements using different excitation energies (penetration depths). By comparison between measured EL spectra and calculated spectra it is found that in a 0.6μm thick cell at room temperature the radiative recombination occurs in a narrow region (90 nm) in the vicinity of the p-layer. Time resolved electroluminescence and forward current measurements show that at room temperature the forward current is first determined by the space charge limited current of the electrons subsequently followed by the much larger recombination current. The recombination current is determined by the injection of holes from the p-contact in agreement with results from device modelling. Radiative and non-radiative lifetimes of the injected carriers are determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 357
Copyright
Copyright © Materials Research Society 1993

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References

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