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Electrochemical Deposition of Metals on Semiconductors

Published online by Cambridge University Press:  10 February 2011

Gerko Oskam ,
John G. Long ,
Maria Nikolova  and
Peter C. Searson
Gerko Oskam
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, [email protected]
John G. Long
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, [email protected]
Maria Nikolova
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, [email protected]
Peter C. Searson
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, [email protected]
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Abstract

The general concepts governing the electrochemical deposition of metal films on semiconductors are discussed, and recent results on the fabrication of Schottky junctions consisting of silicon electrodeposited with platinum, copper and gold are presented. In order to obtain good adherent metal films, the density of nuclei should be high and the films should be grown at low current densities where the charge transfer process is rate limiting. This situation can be realized using potential controlled electrochemical deposition. For metal deposition on silicon, the surface should be pretreated in HF to dissolve the oxide layer. Furthermore, the surface should be stable during deposition which can be achieved by tailoring the deposition solutions and by using electrochemical deposition at negative potentials. It is shown that by using this approach, n-type silicon / Pt, Au, and Cu Schottky junctions can be fabricated of a quality comparable to that of junctions prepared by sputter and vapor deposition techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 257
Copyright
Copyright © Materials Research Society 1997

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References

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