Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-09T14:48:49.478Z Has data issue: false hasContentIssue false
  • English
  • Français

Electro- and Photoluminescence from Ultrathin SImGEn Superlattices

Published online by Cambridge University Press:  15 February 2011

H. Presting ,
U. Menczigar ,
G. Abstreiter ,
H. Kibbel  and
E. Kasper
H. Presting
Affiliation:
Daimler Benz Research Center, D-7900 Ulm, F.R.G.
U. Menczigar
Affiliation:
Technical University of Munich, D-8046 Garching, F.R.G
G. Abstreiter
Affiliation:
Technical University of Munich, D-8046 Garching, F.R.G
H. Kibbel
Affiliation:
Daimler Benz Research Center, D-7900 Ulm, F.R.G.
E. Kasper
Affiliation:
Daimler Benz Research Center, D-7900 Ulm, F.R.G.
Get access

Abstract

P-i-n doped short-period SimGen strained layer superlattices (SLS) are grown on (100) silicon substrates by low temperature molecular beam epitaxy (300C°<∼Tg<∼400C°). The SLS's are grown with period lengths around 10 monolayers (ML) to a thickness of 250nm on a rather thin (50nm) homogeneous Si1−ybGeyb alloy buffer layer serving as strain symmetrizing substrate. Photoluminescence at T=5K is observed for various SimGen SLS samples, the strongest signal was found for a Si5 Ge5 SLS. Samples with identical SLS's but different buffer layer composition and thicknesses are grown to study the influence of strain on the PL. Electroluminescence (EL) at the same energy range is observed from mounted SimGen SLS mesa and waveguide diodes up to T=130K – for the first time reported in strain symmetrized short-period SimGen SLS. The intensity and peak positon of the EL signal was found to be dependent on the injected electrical power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 83
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Presting, H., Jaros, M., and Abstreiter, G., Proceedings of the SPIE conference “Optical Sciences and Engineering”, The Hague, Netherlands (1991); and M. Jaros, K.B. Wong and R. Turton, Journal Electronic Materials 18 35 (1990)Google Scholar
2. Zachai, R., Eberl, K., Abstreiter, G., Kasper, E. and Kibbel, H., Phys. Review Letters 64 1055 (1990)CrossRefGoogle Scholar
3. Schmid, U., Christensen, N.E., and Cardona, M., Phys.Rev.Letters 6, 1933 (1990)Google Scholar
4. Noel, J.P., Rowell, N.L., Houghton, D.C., and Perovic, D.D., Appl.Phys.Lett. 57 1037 (1990)CrossRefGoogle Scholar
5. Robbins, D.J., Calcott, P., and Leong, W.Y., Appl.Phys.Lett. 5 1350 (1991)CrossRefGoogle Scholar
6. Kasper, E., Herzog, H.-J., Jorke, H. and Abstreiter, G., Superlattices and Microstructures 3, 141 (1987).CrossRefGoogle Scholar
7. Nakagawa, K. and Miyao, M., J.Appl.Phys. 6, 3058 (1991)CrossRefGoogle Scholar
8. Weber, J. and Alonso, M.I., Phys. Rev. B40, 5683–93 (1989); and Int. Conf. Science and Technology of Defect Control in Semiconductors, Yokohama (1989).Google Scholar
9. Allen, P.B. and Cardona, M., Phys.Rev. B 27, 4760 (1983)CrossRefGoogle Scholar