Crossref Citations
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Crossref.
Rogers, J. L.
Andry, P. S.
Varhue, W. J.
Adams, E.
Lavoie, M.
and
Klein, P. B.
1995.
Erbium-doped silicon films grown by plasma-enhanced chemical-vapor deposition.
Journal of Applied Physics,
Vol. 78,
Issue. 10,
p.
6241.
Priolo, F.
Franzò, G.
Coffa, S.
Polman, A.
Libertino, S.
Barklie, R.
and
Carey, D.
1995.
The erbium-impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon.
Journal of Applied Physics,
Vol. 78,
Issue. 6,
p.
3874.
Franzo', G.
Coffa, S.
and
Priolo, F.
1996.
Excitation and De-Excitation Processes in Er Implanted Light Emitting Si Devices.
MRS Proceedings,
Vol. 438,
Issue. ,
Priolo, F.
Coffa, S.
Franzo, G.
and
Polman, A.
1996.
Excitation Mechanisms and Light Emitting Device Performances in Er-Doped Crystalline Si.
MRS Proceedings,
Vol. 422,
Issue. ,
Andry, P. S.
Varhue, W. J.
Ladipo, F.
Ahmed, K.
Adams, E.
Lavoie, M.
Klein, P. B.
Hengehold, R.
and
Hunter, J.
1996.
Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition.
Journal of Applied Physics,
Vol. 80,
Issue. 1,
p.
551.
Namavar, Fereydoon
Lu, Feng
Perry, Clive H.
Cremins, Annmarie
Kalkhoran, Nader
and
Soref, Richard A.
1996.
Visible and infrared (1.54 μm) emission from Er-lmplanted porous Si for photonic applications.
Journal of Electronic Materials,
Vol. 25,
Issue. 1,
p.
43.
Heikenfeld, J.
Lee, D. S.
Garter, M.
Birkhahn, R.
and
Steckl, A. J.
2000.
Low-voltage GaN:Er green electroluminescent devices.
Applied Physics Letters,
Vol. 76,
Issue. 11,
p.
1365.