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Electrically Detected Magnetic Resonance On GaAs/AIGaAs Heterostructures

Published online by Cambridge University Press:  15 February 2011

T. Wimbauer ,
D. M. Hofmann ,
B. K. Meyer ,
M. S. Brandt ,
T. Brandl ,
M. W. Bayerl ,
N. M. Reinacher ,
M. Stutzmann ,
Y. Mochizuki  and
M. Mizuta
T. Wimbauer
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
D. M. Hofmann
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
B. K. Meyer
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
M. S. Brandt
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
T. Brandl
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
M. W. Bayerl
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
N. M. Reinacher
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
M. Stutzmann
Affiliation:
Technical University of Munich, Walter Schottky Institute and Physics Department E 16 D-85747 Garching, Germany
Y. Mochizuki
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
M. Mizuta
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Abstract

Electrically detected magnetic resonance (EDMR) has been used to study carrier recombination in GaAs/AlGaAs quantum well structures grown by molecular beam epitaxy. The spin dependent photoconductivity signals depend strongly on the electrical contact properties. Using silver paste contacts a narrow (18 G) resonance located at g = 2.001 is observed. It has been previously attributed to surface defects on GaAs. Using alloyed In-contacts other signals are detected. The dominant resonance observed at 9 GHz has an isotropic g-value of g = 1.99 with a halfwidth of 200 G and is therefore assigned to Cr4+. Other signals of considerably lower intensity are explained by the well known electron paramagnetic resonance (EPR) properties of the Gai-interstitial and the AsGa-antisite defects. EDMR performed at 34 GHz allows the experimental separation of the two sets of hyperfine lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 511
Copyright
Copyright © Materials Research Society 1997

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