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Electrically Active Defects in Cid Imaging Arrays Fabricated on Hg0.7 Cd0.3Te

Published online by Cambridge University Press:  15 February 2011

H.F. Schaake  and
A.J. Lewis
H.F. Schaake
Affiliation:
Central Research laboratories, Texas Instruments Incorporated P.O. Box 225936, Dallas, TX 75265
A.J. Lewis
Affiliation:
Central Research laboratories, Texas Instruments Incorporated P.O. Box 225936, Dallas, TX 75265
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Abstract

CID imaging arrays were fabricated on Hg0.7 Cd0.3Te produced by the solid state recrystallization technique. It was found that the most serious source of dark current was sub-grain boundaries. SEM studies of the microstructure revealed by etching showed that boundaries with a high denisty of dislocations were detectable sources of dark current, while those boundaries with a low density of dislocations, as well as individual dislocations were not. TEM showed that all dislocations were free of precipitates, and most were not dissociated. The sub-grain boundaries were found to arise from misorientation between dendrites which form during the solidification from the melt.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 301
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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