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Electrically Active Deep Levels in ScN

Published online by Cambridge University Press:  17 March 2011

Florentina Perjeru ,
Xuewen Bai  and
Martin E. Kordesch
Florentina Perjeru
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens Oh 45701
Xuewen Bai
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens Oh 45701
Martin E. Kordesch
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens Oh 45701
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Abstract

We report the electronic characterization of n-ScN in ScN-Si heterojunctions using Deep Level Transient Spectroscopy of electrically active deep levels. ScN material was grown by plasma assisted physical vapor deposition and by reactive sputtering on commercial p+ Si substrates. Deep level transient spectroscopy of the junction grown by plasma assisted physical vapor deposition shows the presence of an electronic trap with activation energy EC-ET= 0.51 eV. The trap has a higher concentration (1.2–1.6 1013cm−3) closer to the ScN/Si interface. Junctions grown by sputtering also have an electronic trap, situated at about EC-ET= 0.90 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R3.6
Copyright
Copyright © Materials Research Society 2002

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