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Electricaland Optical Properties of InN/Si Heterostructure

Published online by Cambridge University Press:  11 February 2011

K. Mizuo ,
T. Yamaguchi ,
Y. Saito ,
T. Araki  and
Y. Nanishi
K. Mizuo
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga, 525–8577, Japan
T. Yamaguchi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga, 525–8577, Japan
Y. Saito
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga, 525–8577, Japan
T. Araki
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga, 525–8577, Japan
Y. Nanishi
Affiliation:
Dept. of Photonics, Ritsumeikan Univ., 1–1–1 Noji-Higashi, Kusatsu, Shiga, 525–8577, Japan
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Abstract

Single crystalline InN films were grown on Si substrates by radio-frequency plasma-excited molecular beam epitaxy. Electrical property of InN/Si heterojunction was investigated. We obtained rectifying characteristics in n-InN/p-Si heterostructure for the first time. Forward I-V characteristics were affected by both the buffer layer deposition and the nitridation process. Strong photoluminescence peaks for both single crystalline and polycrystalline InN films grown on the Si substrates were observed at around 0.8 eV, which were smaller than the previous reported PL emission peak of around 1.9 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.26
Copyright
Copyright © Materials Research Society 2003

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References

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