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Electrical Transport Properties of Cu3Ge Thin Films

Published online by Cambridge University Press:  03 September 2012

M. O. Aboelfotoh
M. O. Aboelfotoh*
Affiliation:
IBM T. J. Watson Research Center, P. 0. Box 218, Yorktown Heights, New York 10598
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Abstract

We present results of electrical transport studies performed on thin films of ε1-Cu3Ge in the temperature range 4.2 – 300 K. It is found that ε1-Cu3Ge which has a long-range ordered monoclinic crystal structure, exhibits a remarkably low metallic resistivity of σ 6 μΩ cm at room temperature. The density of charge carriers, which are predominantly holes, is σ 8 × 1022/cm3 and is independent of temperature and film thickness. The Hall mobility at 4.2 K is σ 132 cm2/V s, considerably higher than in pure copper. The elastic mean free path is found to be σ 1200Å, which is surprisingly large for a metallic compound film. The results show that the residual resistivity is dominated by surface scattering rather than grain-boundary scattering. It is also found that by varying the Ge concentration from 0 to 40 at. % the resistivity exhibits anomalous behavior. This behavior is correlated with changes observed in the crystal structure of the thin-film alloys as the Ge concentration is increased. The resistivity remains close to that of the ε1-Cu3Ge phase over a range of Ge concentration which extends from 25 to 35 at. %

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 269
Copyright
Copyright © Materials Research Society 1994

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