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Electrical Transport in Ultrathin NdNiO3 Films

Published online by Cambridge University Press:  12 June 2012

Megan Campbell  and
Ashutosh Tiwari
Megan Campbell
Affiliation:
Nanostructured Materials Research Laboratory University of Utah, Department of Materials Science & Engineering
Ashutosh Tiwari*
Affiliation:
Nanostructured Materials Research Laboratory University of Utah, Department of Materials Science & Engineering
*
*E-mail: [email protected]
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Abstract

Electrical transport properties in ultrathin NdNiO3 films grown on single crystal LaAlO3(001) substrate were characterized. Films with thicknesses ranging from 0.6 nm to 12 nm were grown using a pulsed laser technique. Four probe resistivity as a function of temperature measurements indicated a strong dissipation of strain effects from 0.6 nm to 6 nm as well as the presence of defects in the 12 nm sample. A proposed mechanism of kinetically stable glassy phase formation explains the time dependence of the resistivity in both cooling and heating cycles.

Keywords

metal-insulator transitionthin filmelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1454: Symposium HH – Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems , 2012 , pp. 27 - 32
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Bednorz, J. G. and Müller, K. A., Z. Phys. B. – Condens. Matter 64, 2 (1986).CrossRefGoogle Scholar
Bussmann-Holder, A., Simon, A., and Buttner, H., Phys. Rev. B. 39, 1 (1989).Google Scholar
Ramirez, A. P., J. Phys.: Condens. Matter 9, 39 (1997)Google Scholar
Felser, C., Fecher, G. H., and Balk, B., Angewandte Chemie International Edition 46, 5 (2007).CrossRefGoogle Scholar
Schmid, H., Ferroelectrics 162, 1 (1994).CrossRefGoogle Scholar
Eerenstein, W., Mathur, N. D., and Scott, J. F., Nature 442, 7104 (2006).CrossRefGoogle Scholar
Scherwitzl, R., Zubko, P., Lezama, I. G., Ono, S., Morpurgo, A. F., Catalan, G., and Triscone, J. M., Adv. Mater. 22, 48 (2010).CrossRefGoogle Scholar
Dobin, A. Yu. et al. ., Phys. Rev. B. 68, 11 (2003).CrossRefGoogle Scholar
Garcia-Munoz, J. L., Rodriguez-Carvajal, J., Lacorre, P., and Torrance, J. B. Phys. Rev. B. 46, 8 (1992).CrossRefGoogle Scholar
Torrance, J. B., Lacorre, P., Nazzal, A.I., Ansaldo, E.J., and Niedermayer, Ch., Phys. Rev. B. 45, 14 (1992).CrossRefGoogle Scholar
Medarde, M. et al. ., Phys. B (Amsterdam, Neth.) 234-236 (1997).Google Scholar
Mallik, R., Sampathkumaran, E. V., Alonso, J. A., and Martinez-Lope, M. J., J. Phys.: Condens. Matter 10, 18 (1998).Google Scholar
Granados, X., Fontcuberta, J., and Obradors, X., Manosa, Ll., and Torrance, J. B. Phys Rev. B. 48, 16 (1993).CrossRefGoogle Scholar
Tiwari, A., Narayan, J. Jin, C., and Kvit, A., Appl. Phys. Lett. 80, 8 (2002).Google Scholar
Blasco, J., Castro, M., and Garcia, J., J. Phys.: Condens. Matter 6, 30 (1994).Google Scholar
Lorenzo, J. E., et al. , Phys. Rev. B. 71, 4 (2005).CrossRefGoogle Scholar
Liu, J., Kareev, M., Gray, B., Kim, J. W., Ryan, P., Dabrowski, B., Freeland, J. W., and Chakhalian, J., Appl. Phys. Lett. 96, 23 (2010).Google Scholar
Venimadhav, A., Chaitanyalakshmi, I., and Hegde, M.S., Mater. Res. Bull. 37, 2 (2002)CrossRefGoogle Scholar
Kumar, D., Rajeev, K.P., Alonso, J.A., and Martinez-Lope, M.J., J. Phys.: Condens. Matter 21, 48 (2009).Google Scholar
Kumar, D., Rajeev, K.P., Alonso, J.A., and Martinez-Lope, M.J., J. Phys.: Condens. Matter 21, 18 (2009).Google Scholar