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Electrical Transport and Defect Spectroscopy of Free Standing Single Crystal CVD Diamond Prepared from Methane Rich Mixtures

Published online by Cambridge University Press:  01 February 2011

Andrey Bogdan ,
Ganna Bogdan ,
Ward De Ceuninck ,
Ken Haenen  and
Milos Nesladek
Andrey Bogdan
Affiliation:
[email protected], CEA Saclay, DRT, Bat 451, p. 84, Gif Sur Yvette, N/A, France, +33169088704
Ganna Bogdan
Affiliation:
[email protected], Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, Diepenbeek, B-3590, Belgium
Ward De Ceuninck
Affiliation:
[email protected], Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, Diepenbeek, B-3590, Belgium
Ken Haenen
Affiliation:
[email protected], Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, Diepenbeek, B-3590, Belgium
Milos Nesladek
Affiliation:
[email protected], Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, Diepenbeek, B-3590, Belgium
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Abstract

Transient photocurrent measurements in the Time-of-Flight (TOF) configuration were used to study the electrical transport in single crystalline diamond layers using a Nd:YAG - pumped OPO (2.7 nsec) laser pulse excitation source working at a wavelength of ∼ 218 nm. The amount of collected charge was measured and the hole and electron drift mobilities were determined at room temperature for natural IIa diamond and intrinsic single crystalline CVD diamond samples. A variation of the laser intensity over several orders of magnitude enabled switching between the so called “small signal TOF” and “space charge limited current” (SCLC) modes. Experiments were done using electrical fields in the range of 0.05-1.2 V/μm.

Keywords

diamondelectrical propertiesphotoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 956: Symposium J – Diamond Electronics—Fundamentals to Applications , 2006 , 0956-J09-22
Copyright
Copyright © Materials Research Society 2007

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References

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