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Electrical Transient Based Defect Spectroscopy in Polymeric and Organic Semiconductors

Published online by Cambridge University Press:  01 February 2011

Y.N. Mohapatra
Affiliation:
Samtel Centre for Display Technology, IIT Kanpur India Materials Science Programme, IIT Kanpur India Department of Physics, IIT Kanpur India
V. Varshney
Affiliation:
Samtel Centre for Display Technology, IIT Kanpur India Materials Science Programme, IIT Kanpur India Department of Physics, IIT Kanpur India
V. Rao
Affiliation:
Samtel Centre for Display Technology, IIT Kanpur India Materials Science Programme, IIT Kanpur India Department of Physics, IIT Kanpur India
Samarendra P. Singh
Affiliation:
Samtel Centre for Display Technology, IIT Kanpur India Materials Science Programme, IIT Kanpur India Department of Physics, IIT Kanpur India
G.S. Samal
Affiliation:
Samtel Centre for Display Technology, IIT Kanpur India Materials Science Programme, IIT Kanpur India Department of Physics, IIT Kanpur India
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Abstract

The relation between electrically active defects in organic and polymeric semiconductor materials and degradation of devices such as loss of luminance is currently not understood. In this paper, we study defect related charge processes using electrical transients in polymeric and organic diodes. We monitor slow charging and discharging currents as a function of time for both virgin and electrically aged devices. The current transients are analyzed spectroscopically in time domain using a technique called Time Analyzed Transient Spectroscopy, which is similar to DLTS in its implementation. We observe highly stretched exponentials over 3—4 orders of magnitude in time up to thousands of seconds indicating existence of large distribution in time constants in aged PLED devices. We demonstrate ability to distinguish between different mechanisms of charge storage related to defect related processes in typical OLED and PLED.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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