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Electrical Response of Polycrystalline Silicon Thin Film Transistor on Steel Foil under Mechanical Strain

Published online by Cambridge University Press:  01 February 2011

Po-Chin Kuo ,
Abbas Jamshidi-Roudbari  and
Miltiadis K Hatalis
Po-Chin Kuo
Affiliation:
[email protected], Lehigh University, Electrical and Computer Engineering, Bethlehem, Pennsylvania, United States
Abbas Jamshidi-Roudbari
Affiliation:
[email protected], Lehigh University, Electrical and Computer Engineering, Bethlehem, Pennsylvania, United States
Miltiadis K Hatalis
Affiliation:
[email protected], Lehigh University, Electrical and Computer Engineering, Bethlehem, Pennsylvania, United States
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Abstract

This work investigates the effects of mechanical strain on electrical characteristics of polycrystalline thin film transistors (poly-Si TFTs). Poly-Si TFTs were fabricated on steel foil substrate and characterized under the strain ranging from -1.2% to 1.1% induced by bending. The electron mobility increased under tensile and decreased under compressive strain while that of the hole exhibited an opposite trend. For p-channel TFTs the normalized threshold voltage and subthreshold slope were a function of strain. In both n- and p-channel TFTs the off current decreased under tensile while it increased under compressive strain. The observed mobility trends in poly-Si TFTs are similar to those reported in single crystalline silicon devices.

Keywords

thin filmdevicespolycrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1116: Symposium I – Reliability and Properties of Electronic Devices on Flexible Substrates , 2008 , 1116-I01-05
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1] Troccoli, M. N., Roudbari, A. J., Chuang, T. K., and Hatalis, M. K., “Polysilicon TFT circuits on flexible stainless steel foils,” Solid State Electronics, vol. 50, pp. 1080–1087, 2006.Google Scholar
[2] Chuang, T. K., Troccoli, M., Kuo, P. C., Jamshidi-Roudbari, A., Hatalis, M. K., Biaggio, I., and Voutsas, A. T., “Top-emitting 230 dots/ in. active-matrix polymer light-emitting diode displays on flexible metal foil substrates,” Applied Physics Letters, vol. 90, p. 151114, 2007.Google Scholar
[3] Gleskova, H., Wagner, S., Soboyejo, W., and Suo, Z., “Electrical response of amorphous silicon thin-film transistors under mechanical strain,” Journal of Applied Physics, vol. 92, p. 6224, 2002.Google Scholar
[4] Won, S. H., Chung, J. K., Lee, C. B., Nam, H. C., Hur, J. H., and Jang, J., “Effect of Mechanical and Electrical Stresses on the Performance of an a-Si: H TFT on Plastic Substrate,” Journal of The Electrochemical Society, vol. 151, p. G167, 2004.Google Scholar
[5] Sekitani, T., Iba, S., Kato, Y., Noguchi, Y., Sakurai, T., and Someya, T., “Submillimeter radius bendable organic field-effect transistors,” Journal of Non-Crystalline Solids, vol. 352, pp. 1769–1773, 2006.Google Scholar
[6] Kuo, P. C., Jamshidi-Roudbari, A., and Hatalis, M., “Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil,” Applied Physics Letters, vol. 91, p. 243507, 2007.Google Scholar
[7] Voutsas, A. T., Limanov, A., and Im, J. S., “Effect of process parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films,” Journal of Applied Physics, vol. 94, p. 7445, 2003.Google Scholar
[8] Sun, Y., Thompson, S. E., and Nishida, T., “Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors,” Journal of Applied Physics, vol. 101, p. 104503, 2007.Google Scholar
[9] Wang, T. J., Ko, C. H., Chang, S. J., Wu, S. L., Kuan, T. M., and Lee, W. C., “The Effects of Mechanical Uniaxial Stress on Junction Leakage in Nanoscale CMOSFETs,” Electron Devices, IEEE Transactions on, vol. 55, pp. 572–577, 2008.Google Scholar
[10] Olasupo, K. R. and Hatalis, M. K., “Leakage current mechanism in sub-micron polysilicon thin-filmtransistors,” Electron Devices, IEEE Transactions on, vol. 43, pp. 1218–1223, 1996.Google Scholar
[11] Irie, H., Kita, K., Kyuno, K., and Toriumi, A., “In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), [110], and (111) Si,” IEDM Technical Digest, pp. 225–228, 2004.Google Scholar
[12] Uchida, K., Zednik, R., Lu, C. H., Jagannathan, H., Mc Vittie, J., McLntyre, P. C., and Nishi, Y., “Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin body SOI MOSFETs,” IEDM Technical Digest pp. 229–232, 2004.Google Scholar
[13] Uchida, K., Krishnamohan, T., Saraswat, K. C., and Nishi, Y., “Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime,” IEDM Technical Digest, pp. 120–132, 2005.Google Scholar
[14] Wang, E. X., Matagne, P., Shifren, L., Obradovic, B., Kotlyar, R., Cea, S., Stettler, M., and Giles, M. D., “Physics of Hole Transport in Strained Silicon MOSFET Inversion Layers,” Electron Devices, IEEE Transactions on, vol. 53, pp. 1840–1851, 2006.Google Scholar
[15] Kobayashi, S., Saitoh, M., Nakabayashi, Y., and Uchida, K., “Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors,” Applied Physics Letters, vol. 91, p. 203506, 2007 Google Scholar