Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T02:40:26.380Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Resistivity of Multilayers During Ion Beam Mixing

Published online by Cambridge University Press:  25 February 2011

J. Grilhe ,
J.P. Riviere ,
J. Delafond ,
C. Jaouen  and
C. Templier
J. Grilhe
Affiliation:
Laboratoire de Métallurgie Physique L.A. 131 du C.N.R.S. 40, avenue du Recteur Pineau 86022 Poitiers, (France)
J.P. Riviere
Affiliation:
Laboratoire de Métallurgie Physique L.A. 131 du C.N.R.S. 40, avenue du Recteur Pineau 86022 Poitiers, (France)
J. Delafond
Affiliation:
Laboratoire de Métallurgie Physique L.A. 131 du C.N.R.S. 40, avenue du Recteur Pineau 86022 Poitiers, (France)
C. Jaouen
Affiliation:
Laboratoire de Métallurgie Physique L.A. 131 du C.N.R.S. 40, avenue du Recteur Pineau 86022 Poitiers, (France)
C. Templier
Affiliation:
Laboratoire de Métallurgie Physique L.A. 131 du C.N.R.S. 40, avenue du Recteur Pineau 86022 Poitiers, (France)
Get access

Abstract

A new approach is developed, employing “in situ” electrical resistivity measurements, as a tool to study ion beam mixing of evaporated metal-metal multi or bilayers. The electrical resistivity variations measured continuously during the ion bombardment exhibit a monotonical increase and a tendency toward a saturation process allowing to detect precisely the total mixing of the film. The volume fraction of intermixed atoms can be determined within the framework of a simple conduction model. Experimental results are given in the case of Fe-Al and Al-Ag multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 67
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dearneley, G., Rad. Effects 63, 1 (1982).Google Scholar
2. Herman, H., Nucl. Instr. Meth. 182/183, 887 (1981).Google Scholar
3. Dearneley, G., idem as ref. 2, p. 899.Google Scholar
4. Tsaur, B.Y., Lau, S.S., Mayer, J.W., Appl. Phys. Lett. 36, 823 (1980).Google Scholar
5. Tsaur, B.Y., Lau, S.S., Hung, L.S., Mayer, J.W., idem as ref. 2, p. 67.Google Scholar
6. Picraux, S.T., Follstaedt, D.M., Delafond, J., in Metastable Materials formation by ion implantation. MRS Proceeding vol. 7, p. 71, Picraux, S.T., Choyke, W.J. Ed.Google Scholar
7. Maine, B.M., Nicolet, M.A., Banwell, G.C., idem as ref. 7, p. 79.Google Scholar
8. Mayer, J.W., Tsaur, B.Y., Lau, S.S., Hung, L.S., idem as ref. 2, p. 1.Google Scholar
9. Grilhé, J., Riviere, J.P., Delafond, J., Jaouen, C., This MRS Symposium.Google Scholar
10. Rivière, J.P., Delafond, J., Jaouen, C., Bellara, A., Dinhut, J.F., Applied Physics (to be published).Google Scholar