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Electrical Resistivity And Crystal Structure Of Nickel-Based Multilayer Thin Films

Published online by Cambridge University Press:  25 February 2011

M. Tan ,
E. Haftek ,
A. Waknis  and
J. A. Barnard
M. Tan
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
E. Haftek
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
A. Waknis
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
J. A. Barnard
Affiliation:
The University of Alabama, Department of Metallurgical and Materials Engineering, Tuscaloosa, AL 35487–0202
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Abstract

The electrical resistivity and crystal structure of three Ni-based periodic multilayer thin film systems (Al/Ni, Ti/Ni, and Cu/Ni) have been investigated. In each series of films the Ni layer thickness was systematically varied while the thickness of the ‘spacer’ layer (Al, Ti, or Cu) was fixed. In the Al/Ni and Ti/Ni systems films with very thin Ni layers (and consequently large volume fractions of spacer and ‘interfacial’ material) yielded very high resistivities which dropped rapidly with increasing Ni thickness. By contrast, the resistivity of Cu/Ni multilayers continuously increased with Ni layer thickness due to the decline in volume fraction of high conductivity Cu. Both the Al/Ni and Ti/Ni systems exhibit Ni(111) texture in the thicker Ni layer samples. As the Ni layer thickness decreases the Ni(111) peak loses intensity and broadens due to finer grain size and increasing disorder. Al-Ni and Ti-Ni compounds are also noted. In the Cu/Ni system, however, the sharpness of the Ni(111) peak passes through a minimum as the Ni layer thickness decreases but then increases for the thinnest Ni layer samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 695
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Fuchs, K., Proc. Cambridge Phil. Soc. 34, 100 (1938).CrossRefGoogle Scholar
[2] Sondheimer, E.H., Advan. Phys. 1, 1 (1952).CrossRefGoogle Scholar
[3] Mayadas, A.F. and Shatzkes, M., Phys. Rev. B. 1, 1382 (1970).CrossRefGoogle Scholar
[4] Hejase, H., Schroder, K., Roberts, D., and Vastag, B., J. Magn. Magn. Mat. 67, 395(1987).CrossRefGoogle Scholar
[5] Clemens, B. M., Phys. Rev. B. 33, 7615 (1986).CrossRefGoogle Scholar
[6] Waknis, A., Haftek, E., Tan, M., and Barnard, J.A., Mat. Res. Soc. Symp. Proc. 232 171, (1991).CrossRefGoogle Scholar
[7] Haftek, E., Tan, M., Waknis, A., and Barnard, J. A., presented at this conference.Google Scholar
[8] Barnard, J.A., Haftek, E., Waknis, A., and Tan, M., Mat. Res. Soc. Symp. Proc. 202 685, (1991).CrossRefGoogle Scholar
[9] Cullity, B.D., Elements of X-ray Diffraction. (Addison-Wesley, Reading, MA, 1956)Google Scholar
[10] Mott, N.F. and Jones, H., The Theory of the Properties of Metals and Allovs. (Dover Publications, New York, 1958).Google Scholar