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Electrical Reliability of Giant Magneto-Resistive Recording Sensors

Published online by Cambridge University Press:  10 February 2011

I-Fei Tsu ,
C. Chang  and
H. S. Edelman
C. Chang
Affiliation:
Seagate Technology, Minnesota, U.S.A
H. S. Edelman
Affiliation:
Seagate Technology, Minnesota, U.S.A
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Abstract

The electrical reliability of Ta/NiMn/NiFe/Co/Cu/Co/NiFe/Ta top spin valve sensors was studied. Electrical current densities in the range of 20–50 MA/cm2 were applied at 70°C ambient temperature. The combined Joule and ambient heating correspond to peak sensor temperatures of 170–300°C. Resistance and giant magneto-resistive (GMR) amplitude of the sensors were measured with time up to 800 hours. Device reliability was predicted from the Arrhenius plots of time to failure (TTF). Microstructure of sensors after stress was studied by scanning transmission electron microscope (STEM) and energy dispersive X-ray spectroscopy (EDX). The device failure mechanism is discussed on the scope of inter-layer diffusion and electromigration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 139
Copyright
Copyright © Materials Research Society 1999

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