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Electrical Properties of the Multilayer Structures Based on Ultrathin Diamond-Like Carbon Films

Published online by Cambridge University Press:  15 February 2011

V. I. Polyakov ,
P. I. Perov ,
N. M. Rossukanyi ,
A. I. Rukovishnikov ,
A. V. Khomich  and
A. M. Baranov
V. I. Polyakov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, [email protected]
P. I. Perov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, [email protected]
N. M. Rossukanyi
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, [email protected]
A. I. Rukovishnikov
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, [email protected]
A. V. Khomich
Affiliation:
Institute of Radio Eng. & Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, [email protected]
A. M. Baranov
Affiliation:
NPO Vacuummashpribor, Nagornyi pr.7, Moscow 113105, Russia
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Abstract

The electrical characteristics of multilayer structures based on amorphous ultrathin diamondlike carbon films were investigated including dynamic and quasi-static current-voltage characteristics, capacitance-voltage characteristics, deep level transient spectra. The effect of illumination and temperature on these characteristics was also investigated. For the multilayer structures composed of lower band gap amorphous carbon layers separated with higher band gap ones, there were observed well-defined regions of negative differential resistance and sharp 20-fold changes in capacitance at definite voltages. Activation energies, capture cross sections, and locations of trapping centers were defined. The effects observed are discussed in terms of trap-assisted tunneling and, also, in terms of resonant tunneling between energy levels in superlattices and charge filling of the quantum wells and trapping centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 845
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Abeles, B., and Tiedje, T., Phys. Rev. Lett., 51, 2003 (1983).Google Scholar
2.Miyazaki, S., Ihara, Y., and Hirose, M., Phys. Rev. Lett., 59, 125 (1987).Google Scholar
3.Sleptsov, V.V., Elinson, V.M., Ermakova, O.N., Ermakov, M.G., Polyakov, V.I., Perov, P.I., Ivanovsky, G.F., Pis'ma v Zh. Techn. Fiz., 16, 15 (1990).Google Scholar
4.Polyakov, V.I., Perov, P.I., Ermakov, M.G., Ermakova, O.N., Elinson, V.M., Sleptsov, V.V., Thin Solid Films, 212, 226 (1992);Google Scholar
Polyakov, V.I., Ermakov, M.G., Ermakova, O.N., Perov, P.I., Sleptsov, V.V., Elinson, V.M., Baranov, A.M., Diamond and Related Materials, 1, 626 (1992).Google Scholar
5.Sleptsov, V.V., Kuzin, A.A., Baranov, A.M., Elinson, V.M., Diamond and Related Materials, 1, 570 (1992).Google Scholar
6.Chan, K.K., Silva, S.R.P., and Amaratunga, G.A.J., Thin Solid Films, 212, 232 (1992).Google Scholar
7.Polyakov, V., Ermakov, M., Ermakova, O., Perov, P., Sleptsov, V., Elinson, V., Baranov, A., 2nd International Conference on the Applications of Diamond Films and Related Materials, edited by Yoshikawa, M., Tzeng, Y., and Yarbrough, W.A. (The 2nd International Conference -ADFRM Proc, Tokyo, Japan 1993), p.381–386.Google Scholar
8.Silva, S.R.P., Amaratunga, G.A.J., Rusli, , Haq, S., Salje, E.. Thin Solid Films, 253, 20 (1994).Google Scholar
9.Ravi, S.Silva, P., Amaratunga, Gehan A. J., Woodburn, Charles N., Weiland, Mark E., Haq, Sajad, Japan. Journ. Appl. Phys., 33, 6458 (1994).Google Scholar
10.Arsenault, C.J., Meunier, M., Beaudoin, M., Movaghar, B., Phys. Rev. B 44, 11521 (1991).Google Scholar
11.Bernard, N., Frank, B., Movaghar, B., Bauer, G.H., Philosoph. Magazine, B 70, 1139 (1994).Google Scholar
12.Lang, D.V., J. Appl. Phys. 45, 3023 (1974).Google Scholar
13.Nath, S., Wilson, J.I.B., Diamond and Related Materials, 5, 65 (1995).Google Scholar
14.Polyakov, V.I., Perov, P.I., Rukovishnikov, A.I., Ermakova, O.N., Aleksandrov, A.L., Igna-tov, B.G., Mikroelektronika, 16, 326 (1987);Google Scholar
Arora, B.M., Chakravarty, S., Subramanian, S., Polyakov, V.I., Ermakov, M.G., Ermakova, O.N., Perov, P.I.., J. Appl. Phys., 73, 1802 (1993);Google Scholar
Polyakov, V.I., Rukovishnikov, A.I., Perov, P.I., Khomich, A.V., Sukhanov, A.A., Dorf-man, B.F., Pypkin, B.N., Abraizov, M.G., Druz, B., Thin Solid Films (1996), to be published.Google Scholar
15.Pereira, I., Carreno, M.N.P., Onmori, R.K., Sassaki, C.A., Andrare, A.M., Alvarez, F., Journal Non-Crystalline Solids, 97&98, 871 (1987).Google Scholar
16.Jiang, Y.L., and Hwang, H.L., IEEE Trans. Electron. Devices, 36, 2816 (1989).Google Scholar