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Electrical Properties of the Ion-Implanted Pd1−x Bx System

Published online by Cambridge University Press:  15 February 2011

L. Mendoza-Zelis ,
A. Traverse ,
J. Chaumont ,
H. Bernas  and
L. Dumoulin
L. Mendoza-Zelis
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P.N°1, F. 91406 Orsay.
A. Traverse
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P.N°1, F. 91406 Orsay.
J. Chaumont
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P.N°1, F. 91406 Orsay.
H. Bernas
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, B.P.N°1, F. 91406 Orsay.
L. Dumoulin
Affiliation:
Laboratoire de Physique des Solides, Université Paris XI, F. 91406 Orsay.
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Abstract

The resistivity (and resistivity temperature dependence) of low temperature B implanted Pd films was measured at B concentrations up to x ֮0.55. Both properties indicate that the evolution of the system towards an amorphous structure sets in at about x ֮0.30 (the deep eutectic composition). The previous discovery of superconductivity by Stritzker and Becker at high values of x is confirmed. Annealing properties of the system were also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 7 , 1981 , 223
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

visitor from Universidad de La Plata under a felowship of CONICET (Republica Argentina)

References

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