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Electrical Properties of Sipos Films Deposited on Crystalline Silicon

Published online by Cambridge University Press:  21 February 2011

Tien-Min Chuang ,
Kenneth Rose  and
Ronald J. Gutmann
Tien-Min Chuang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
Kenneth Rose
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
Ronald J. Gutmann
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Transport and trapping effects on undoped and phosphorus-doped SIPOS films on n-type and p-type Si have been characterized by C-V-ω, I-V, DLTS and photo-induced microwave reflection techniques. Our C-V and DLTS data on undoped SIPOS indicate that interface traps with a density of 2 × 1012cm−2 eV−1 and a response time between 1 and 10 μsec exist near the midgap of the SIPOS. Photo-induced microwave reflection transient-waveforms show an order of magnitude increase in photoconductivity decay time with doped SIPOS films. Our data shows that trapping effects exist in doped SIPOS and that these traps could reduce the cutoff frequency of SIPOS emitter transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 383
Copyright
Copyright © Materials Research Society 1990

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