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Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  03 September 2012

R.Y. Korotkov  and
B.W. Wessels
R.Y. Korotkov
Affiliation:
Materials Research Center and Department of Materials Science and Engineering Northwestern University, Evanston, IL 60208
B.W. Wessels
Affiliation:
Materials Research Center and Department of Materials Science and Engineering Northwestern University, Evanston, IL 60208
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Abstract

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.80
Copyright
Copyright © Materials Research Society 1999

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