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Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

Published online by Cambridge University Press:  21 March 2011

B. Luo ,
J. Kim ,
R. Mehandru ,
F. Ren ,
K. P. Lee ,
S.J. Pearton ,
A.Y. Polyakov ,
N.B. Smirnov ,
A.V. Govorkov  and
E.A. Kozhukhova
...Show all authors
B. Luo
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA;
J. Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA;
R. Mehandru
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA;
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611, USA;
K. P. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;
A.Y. Polyakov
Affiliation:
Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia;
N.B. Smirnov
Affiliation:
Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia;
A.V. Govorkov
Affiliation:
Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia;
E.A. Kozhukhova
Affiliation:
Institute of Rare Metals, Moscow, 109017, B. Tolmachevsky, 5, Russia;
A.V. Osinsky
Affiliation:
Corning Applied Technologies, Woburn, MA 01801, USA
P.E. Norris
Affiliation:
Corning Applied Technologies, Woburn, MA 01801, USA
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Abstract

Properties of n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions prepared by HVPE on 4H SiC substrates were studied by means of C-V, C/G-T, C-f, I-V and DLTS. It is shown, in agrrement with earlier publications, that the GaN/p-SiC HJ is staggered type II with ΔEc=-0.4 eV andΔEv=0.6 eV. Whenchanging GaN for AlGaN with Al mole fraction of x=0.25-0.3 the band alignment becomes normal type I with ΔEc=0.2 eV andΔEv=0.6 eV. I-V characteristics of both heterojunctions bear evidence of strong tunneling via defect states, particularly centers with activation energy of 1.25 eV for GaN/4H SiC HJ. The tunneling was found to be more pronounced in the AlGaN/SiC HJs even though these HJs showed no evidence of formation of dark line defects at the interface, in contrast to GaN/SiC. DLTS measurements on both types of HJs revealed the presence of broad bands whose behavior is indicative of these bands being related to continuous states in the gap, most likely near the nitride/carbide interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.8.1
Copyright
Copyright © Materials Research Society 2002

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