Hostname: page-component-5c6d5d7d68-7tdvq Total loading time: 0 Render date: 2024-09-01T19:55:29.105Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of Mbe-Grown HgCdTe

Published online by Cambridge University Press:  21 February 2011

S. Hwang  and
J.F. Schetzina
S. Hwang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

A detailed analysis of Hall data obtained at temperatures between 20K and 300K has been made for n-type HgCdTe epilayers prepared by molecular beam epitaxy (MBE). Based on a theoretical calculation for intrinsic concentrations that takes into account the non-parabolicity of the conduction band, the electron concentrations are shown to follow nicely the model for semiconductors in their intrinsic and extrinsic ranges. The scattering mechanisms in these materials are studied through the analysis of electron mobility. Polar mode phonon scattering, acoustic mode via deformation-potential coupling, acoustic mode via piezoelectric coupling, and impurity scattering are included in the mobility calculation. The results indicate that these mechanisms are insufficient to explain the measured mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 245
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dornhaus, R. and Nimtz, G., Narrow Gap Semiconductors, Vol. 98 in Springer Tracts in Modern Physics (Springer-Verlag, Berlin, 1983).Google Scholar
2. Farrow, R.F.C., Schetzina, J.F., and Cheung, J.T. (editors), Materials for Infrared Detectors and Sources, Mat. Res. Soc. Symp. Proc. Vol. 90 (Materials Research Society, Pittsburgh, 1987).Google Scholar
3. Giles, N.C., Lansari, Y., Han, J.W., Cook, J.W. Jr., and Schetzina, J.F., presented in the 1989 Workshop, U.S. on the Physics and Chemistry of Mercury Cadmium Telluride and Related II-VI Compounds.Google Scholar
4. Cheung, D.T., J. Vac. Sci. Technol. A 3, 128 (1985).Google Scholar
5. Faurie, J.P. and Million, A., J. Crystal Growth 54, 582 (1981).Google Scholar
6. Harris, K.A., Hwang, S., Blanks, D.K., Cook, J.W. Jr., Schetzina, J.F., and Otsuka, N., J. Vac. Sci. Technol. A 4, 2061 (1986).Google Scholar
7. Tunnicliffe, J., Irvine, S.J.C., Dosser, O.D., and Mullin, J.B., J. Crystal Growth 68, 245 (1984).Google Scholar
8. Nemirovsky, Y. and Finkman, E., J. Appl. Phys. 50, 8107 (1979).Google Scholar
9. Hansen, G.L. and Schmit, J.L., J. Appl. Phys. 54, 1639 (1983).Google Scholar
10. Bebb, H.B. and Ratliff, C.R., J. Appi. Phys. 42, 3189 (1971).Google Scholar
11. Hansen, G.L., Schmit, J.L., and Casselman, T.N., J. Appl. Phys. 53, 7099 (1982).Google Scholar
12. Stroud, A.H. and Secrest, D., Gaussian Quadrature Formulas (Prentice Hall, New York, 1966).Google Scholar
13. Hansen, G.L. and Schmit, J.L., J. Appl. Phys. 54, 1639 (1983).Google Scholar
14. Baars, J. and Sorger, F., Solid State Commun. 10, 875 (1972).Google Scholar
15. Nag, B.R., Phys. Stat. Sol. (b) 66, 719 (1974).Google Scholar
16. Hwang, S., Ph.D. Thesis, North Carolina State University, 1988.Google Scholar