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Electrical Properties of Mbe-Grown HgCdTe

Published online by Cambridge University Press:  21 February 2011

S. Hwang  and
J.F. Schetzina
S. Hwang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

A detailed analysis of Hall data obtained at temperatures between 20K and 300K has been made for n-type HgCdTe epilayers prepared by molecular beam epitaxy (MBE). Based on a theoretical calculation for intrinsic concentrations that takes into account the non-parabolicity of the conduction band, the electron concentrations are shown to follow nicely the model for semiconductors in their intrinsic and extrinsic ranges. The scattering mechanisms in these materials are studied through the analysis of electron mobility. Polar mode phonon scattering, acoustic mode via deformation-potential coupling, acoustic mode via piezoelectric coupling, and impurity scattering are included in the mobility calculation. The results indicate that these mechanisms are insufficient to explain the measured mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 245
Copyright
Copyright © Materials Research Society 1990

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References

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