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Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

Published online by Cambridge University Press:  21 March 2011

M. Ahoujja ,
Y. K. Yeo ,
R. L. Hengehold  and
J. E. Van Nostrand
M. Ahoujja
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
Y. K. Yeo
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
R. L. Hengehold
Affiliation:
Air Force Institute of Technology, Wright-Patterson AFB, OH, USA
J. E. Van Nostrand
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, OH, USA
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Abstract

Hall-effect measurements were conducted on Si-doped AlxGa1−xN films grown on sapphire substrate by gas source molecular beam epitaxy. The Al mole fraction in the 1 [.proportional]m thick AlxGa1−xN was 0.0, 0.3, and 0.5, and the Si doping concentration was kept at a nominal value of 1018 cm−3. Variable temperature Hall-effect measurements reveal a presence of a highly degenerate n-type region at the AlxGa1−xN /sapphire interface. This degenerate interfacial layer dominates the electrical properties below 30 K and significantly affects the properties of the AlxGa1−xN layer. Thus, by using a two-layer conducting model, the carrier concentration and mobility of the AlxGa1−xN layer alone are obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.5
Copyright
Copyright © Materials Research Society 2001

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References

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