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Electrical Properties of Integrated Ta2O5 Metal-Insulator-Metal Capacitors

Published online by Cambridge University Press:  10 February 2011

B. C. Martin ,
C. Basceri ,
S. K. Streiffer  and
A. I. Kingon
B. C. Martin
Affiliation:
Materials Research and Strategic Technologies, Semiconductor Products Sector, Motorola, Mesa, Arizona 85202.
C. Basceri
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695–7907.
S. K. Streiffer
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695–7907.
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC 27695–7907.
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Abstract

We demonstrate the feasibility of a Ta2O5-based metal-insulator-metal (MIM) capacitor module which is integrated into the backend-of-the-line of a 0.5 μm CMOS process flow. The demonstration utilizes 6-inch wafers, sputtered Ta2O5 films with TaN and TiN electrodes, reactive ion etch (RIE) processes for defining the capacitor stack, and a metallization scheme which uses hot Al(Cu) and W plugs and a standard forming gas anneal (N2-5% H2). Acceptable electrical properties have been achieved within these processing constraints for the integrated MIM capacitor module, including specific capacitance (C/A) and leakage current density (J) of ≥ 5 fF/μm2 and ≤ 1 pA/pF-V, respectively. In addition, we compare the fundamental properties of the Ta2O5 dielectric with literature reports and point out that leakage mechanisms must be analyzed with care due to significant dielectric relaxation in the films under certain processing/measurement conditions. For the baseline integrated films, we confirm that leakage is most consistent with a Poole-Frenkel mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 101
Copyright
Copyright © Materials Research Society 1998

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References

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