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Electrical Properties of InN Grown by RF-MBE

Published online by Cambridge University Press:  17 March 2011

Yoshiki Saito ,
Nobuaki Teraguchi ,
Akira Suzuki ,
Tomohiro Yamaguchi ,
Tsutomu Araki  and
Yasushi Nanishi
Yoshiki Saito
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Nobuaki Teraguchi
Affiliation:
Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Akira Suzuki
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
Tomohiro Yamaguchi
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
Tsutomu Araki
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
Yasushi Nanishi
Affiliation:
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto, Tenri, Nara 632-8567, Japan
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Abstract

InN films with excellent surface morphology were grown by controlled the V/III ratio of InN epitaxal layer. It was found they were single crystal of InN films with wurtzite structure by X-ray diffraction (XRD) measurement and reflection high-energy electron diffraction (RHEED) observation. Hall mobility as high as 760 cm2/Vs was achieved for InN film grown at 550°C with 240 W of RF plasma power with a carrier density of 3.0×1019 cm−3 at room temperature. To our knowledge, this electron mobility is the highest value ever reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.18
Copyright
Copyright © Materials Research Society 2001

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References

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