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Electrical Properties of Homoepitaxial Diamond Films

Published online by Cambridge University Press:  26 February 2011

G. Sh. Gildenblat ,
S. A. Grot ,
C. W. Hatfield ,
C. R. Wronski ,
A. R. Badzian ,
T. Badzian  and
R. Messier
G. Sh. Gildenblat
Affiliation:
Center for Electronic Materials and Processing and Department of Electrical Engineering
S. A. Grot
Affiliation:
Center for Electronic Materials and Processing and Department of Electrical Engineering
C. W. Hatfield
Affiliation:
Center for Electronic Materials and Processing and Department of Electrical Engineering
C. R. Wronski
Affiliation:
Center for Electronic Materials and Processing and Department of Electrical Engineering Materials Research Laboratory Department of Engineering Science and Mechanics The Penn State University, University Park, PA 16802
A. R. Badzian
Affiliation:
Materials Research Laboratory
T. Badzian
Affiliation:
Materials Research Laboratory
R. Messier
Affiliation:
Materials Research Laboratory Department of Engineering Science and Mechanics The Penn State University, University Park, PA 16802
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Abstract

We describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 297
Copyright
Copyright © Materials Research Society 1990

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References

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