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Electrical Properties of Fine Grain Composite Carbon Films

Published online by Cambridge University Press:  25 February 2011

Hsiung Chen  and
R. O. Dillon
Hsiung Chen
Affiliation:
Electrical Engineering Department and Center for Microelectronic and Optical Materials Research, University of Nebraska, Lincoln, NE 68588–0511
R. O. Dillon
Affiliation:
Electrical Engineering Department and Center for Microelectronic and Optical Materials Research, University of Nebraska, Lincoln, NE 68588–0511
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Abstract

We have studied the electrical properties of boron doped composite films that consist of diamond and amorphous carbon. These films were deposited by hot filament chemical vapor deposition at a relatively high carbon/hydrogen ratio. The mixture of trimethyl borate vapor, and methane served as a source gas. The composite films had much smoother surfaces than polycrystalline diamond films.

The surface morphology and average roughness were determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Raman spectroscopy and x-ray diffraction were used to analyze the structure of the films.

A composite film grown with 4% methane in hydrogen had a higher resistivity than a well faceted diamond film grown at 0.5% methane. In contrast to hydrogenated amorphous carbon films which have a lower resistivity after thermal annealing, the resistivities of composite films increased by a factor of two to ten after 3 hours annealing at 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 133
Copyright
Copyright © Materials Research Society 1992

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References

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