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Electrical Properties of Doped Tin Dioxide Thin Films Deposited Using Femtosecond Pulsed Laser Ablation.

Published online by Cambridge University Press:  21 March 2011

J. E. Dominguez ,
L. Fu  and
X. Q. Pan
J. E. Dominguez
Affiliation:
The University of Michigan, Department of Materials Science and Engineering, Ann Arbor, MI, 48109
L. Fu
Affiliation:
The University of Michigan, Department of Materials Science and Engineering, Ann Arbor, MI, 48109
X. Q. Pan
Affiliation:
The University of Michigan, Department of Materials Science and Engineering, Ann Arbor, MI, 48109
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Abstract

Tin dioxide thin films are widely used as chemical sensors. The mechanism for gas sensitivity depends on the chemisorption characteristics of the oxide surface and on the electronic characteristics of thefilm. Chemical doping and the film microstructure can influence the electronic properties. In this paper tin dioxide thin films doped with rare earth and transition metals were deposited on the (1012 -oriented sapphire substrates by femtosecond pulsed laser deposition. The resulting films were single crystalline with a thickness of about 15 nm and 30 nm. The response of the films to reducing gases was measured in a gas reactor at high temperature. The electrical transport properties of the films were determined by Hall effect measurements within the gas reactor. The valence and ionic radius of dopants have strong influence on the mobility and concentration of electrical carriers (i.e. electrons) and thus affect the response of the thin films to reducing gases. A model correlating the dopant characteristics to the electrical properties was developed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA7.3.1
Copyright
Copyright © Materials Research Society 2001

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