Hostname: page-component-5c6d5d7d68-thh2z Total loading time: 0 Render date: 2024-08-27T22:46:15.990Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of Dislocations and Boundaries in Semiconductors

Published online by Cambridge University Press:  15 February 2011

Hans J. Queisser
Hans J. Queisser*
Affiliation:
Max-Planck-Institut FüR FestköRperforschung, 7000 Stuttgart 80, Frg
Get access

Abstract

Simple models have been suggested to predict electronic properties of lattice defects in semiconductor crystals: dislocations ought to act via the acceptor character of dangling bonds, and small-angle grain boundaries ought to consist of regular arrays of dislocations. The actual situation in most semiconductors is, however, much more complicated. The observed electrical effects of dislocations do not confirm the dangling-bond concept, they are affected by dissociation and reconstruction. There appear to be differences between straight and kinked dislocations. Dislocations owe much of their electronic behavior to clouds and precipitates of impurities; oxygen in silicon plays a significant role. This review summarizes the present status of experimental methods and results, including luminescence and capacitance spectroscopy as well as mapping and imaging techniques using electron-microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 323
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shockley, W., Phys. Rev. 91, 228 (1953) (abstract only).Google Scholar
2. Read, W. T. Jr. Phil. Mag. 45, 775 (1954).CrossRefGoogle Scholar
3. Labusch, R. and Schröter, W., in:“Dislocations in Solids”, Vol.5,Nabarro, F.R.N., editor (North Holland, Amsterdam 1980) p. 127.Google Scholar
4. Yu., Osip'yan, A. and Ryzhkin, I.A., Zh. Eksp. Teor. Fiz. 79, 961 (1980)Google Scholar
4a [Sov. Phys. JETP 52, 489 (1980)].Google Scholar
5. Authier, B., in: Festkörperprobleme, Vol. XVIII, Treusch, J., ed. (Vieweg,Braunschweig 1978) p.1;Google Scholar
5a Fischer, H., in: Festkörperprobleme, Vol. XVIII, Treusch, J., ed. (Vieweg,Braunschweig 1978) p. 19.Google Scholar
6. Taylor, W.E., Dash, W.C. Miller, L.E. and Mueller, C.W. (Panel Discussion)in: “Properties of Elemental and Compound Semiconductors”, Gatos, H.C.,ed. (Interscience, New York 1960) p.327.Google Scholar
7. Dash, W.C., J. Appl. Phys. 30, 459 (1959);CrossRefGoogle Scholar
7a Ziegler, G. Naturf., Z.,16a,219 (1961).Google Scholar
8. Spenke, E. and Heywang, W., “Twenty-Five Years of Semiconductor-grade Silicon”,phys. stat. sol. a64, 11 (1981).Google Scholar
9. Patel, J.R. and Chaudhuri, A.R., Phys. Rev. 143, 601 (1966); Haasen, P.,phys. stat. sol. a28, 145 (1975).CrossRefGoogle Scholar
10. Queisser, H.J., J. Appl. Phys. 32, 1776 (1961);Google Scholar
10a Prussin, S., J. Appl. Phys. 32, 1876 (1961);Google Scholar
10b a review on process-induced defects in Si by Watanabe, M. Matsushita, Y. and Shibata, K., Inst. Phys. Conf. Ser.59,Oiso Conf. 1980 Google Scholar
10c Hasiguti, R.R., ed. p.123.Google Scholar
11. Schwuttke, G.H. and Queisser, H. J., J. Appl. Phys. 33, 1540 (1962).CrossRefGoogle Scholar
12. Finch, R.H. Queisser, H.J. Thomas, G. and Washburn, J., J. Appl. Phys. 34,406 and 3153 (1963).Google Scholar
13. Goetzberger, A. and Shockley, W., J. Appl. Phys. 31, 1821 (1960).Google Scholar
14. Queisser, H.J. and Goetzberger, A., Phil.Mag. 8, 1063 (1963);Google Scholar
14a recent confirmation on precipitation at faults: Strack, H. Mayer, K.R. and Kolbesen, B.O.,Solid-St. Electron. 22, 135 (1979)Google Scholar
14b or Ogden, R. and Wilkinson, J.M., J. Appl.Phys. 48, 412 (1977).Google Scholar
15. Queisser, H.J. Electrochem., J., Soc. 110, 52 (1963).Google Scholar
16. Queisser, H.J. Physik, Z., 176, 313 (1963), concerns the forward characteristics of p-n junctions with defects.Google Scholar
17. Dash, W.C., J. Appl. Phys. 27, 1193 (1956).CrossRefGoogle Scholar
18. Queisser, H.J., J. Phys. Soc. Jpn. 18, Suppl. III, 142 (1963); Redfield, D., Appl. Phys. Lett. 40, 163 (1982).Google Scholar
19. Queisser, H.J., “Dislocations and Semiconductor Device Failure” in: “Physics of Failure in Electronics” (Proc. Chicago Conf. 1962), Goldberg, M.F. and Vacarro, J., editors (Spartan Books, Baltimore 1963).Google Scholar
20. Queisser, H.J., in: “Festkörperprobleme”, Vol. II, Sauter, F., editor (Vieweg,Braunschweig 1963), p. 162.Google Scholar
20a (A detailed review, in German, on diffusion and dislocations, junction properties, stacking faults; 95 references).Google Scholar
21. Holt, D.B. de, J., Physique 40, suppl. 6, C6–189 (1979).Google Scholar
22. Cottrell, A.H., “Dislocations and Plastic Flow in Crystals”, Clarendon, Oxford (1953), p.56.Google Scholar
23. Queisser, H.J., “Failure Mechanisms in Si Semiconductors”, Final Rep.AF 30(602) 2556 (1963).Google Scholar
24. Queisser, H.J. Hubner, K. and Shockley, W., Phys. Rev. 123, 1245 (1961).CrossRefGoogle Scholar
25. Shockley, W.B., United States Patent 2,954,307 (filed 1957);Google Scholar
25a Mataré, H.F. Physik, Z., 145, 206 (1956), for a book on early work, see Ref. 47.Google Scholar
26. Ploog, K., Ann. Rev. Mater. Sci. 11, 171 (1981).Google Scholar
27. Hornstra, J., J. Phys. Chem. Solids 5, 129 (1958).Google Scholar
28.See, for example Ref. 3, p. 183.Google Scholar
29. Proceedings Hünfeld Symposium:, de, J., hPhysique 40, suppl. C6, introductory foreword (1979).Google Scholar
30. Haasen, P., Acta Metallogr. 5, 598 (1957).Google Scholar
31. Alexander, H., Ref. 29, p.C6–1.Google Scholar
32. Masut, R. Penchina, C.M. and Farvacque, J.L., J. Appl.Phys. 53, 4964, 4970 (1982).Google Scholar
33. Hirsch, P.B., Ref. 29 p. C6–27; also Ref. 3.Google Scholar
34. Cockayne, D.J. H. Ray, I.L.F. and Whelan, M.J., Phil. Mag. 22, 853 (1970).Google Scholar
35. Häussermann, F. and Schaumburg, H., Phil. Mag. 27, 745 (1973).Google Scholar
36. Meingast, R. and Alexander, H., phys. stat. sol. a17, 229 (1973).Google Scholar
37. Gai, P.L. and Howie, A., Phil. Mag. 30, 939 (1974);Google Scholar
37a Alexander, H., Proc. 6th.Eur. Congr. Electr. Micr. Jerusalem, p. 208 (1976);Google Scholar
37b Gottschalk, H. Patzer, G. and Alexander, H., phys. stat. sol. a45, 207 (1978).Google Scholar
38. Cockayne, D.J.H. Ray, I.L.R. and Whelan, M.J., Phil. Mag. 20, 1265 (1969).CrossRefGoogle Scholar
39. Read, W.T., “Dislocations in Crystals” (Mc.Graw Hill, New York 1953).Google Scholar
40. Hull, D., “Introduction to Dislocations” 2nd ed.(Pergamon, Oxford 1975).Google Scholar
41. Seeger, A. Donth, H. and Pfaff, F., Disc. Faraday Soc. 23, 19 (1957)Google Scholar
41a orRef. 40, p. 232.Google Scholar
42. Haasen, P., in Ref. 29, p. C6–111.Google Scholar
43. Hirsch, P.B., in Ref. 29, p. C6–117.Google Scholar
44. Lang, D.V. and Kimerling, L.C., Appl. Phys. Lett. 28, 248 (1976);Google Scholar
44a reviewed in: Kimerling, L.C., Solid-St. Electron. 21, 1391 (1978).CrossRefGoogle Scholar
45. Alexander, H. Abt. Metallphysik, II., f., Phys.Inst.Universitat Kö1n,Fed.Rep.of Germany, organizer,Google Scholar
45a see: Alexander, H. Kisielowski-Kemmerich, C.and Weber, E.R., to be publ. 1982/83 in Physica B.Google Scholar
45a. A very recent critique by Kveder, V.V. et al. ,phys. stat. sol. a72,701(1982).Google Scholar
46. “Grain Boundaries in Semiconductors”, ed. by Leamy, H.J. Pike, G.E. and Seager, C.H., (Proc. Mat. Res. Soc. 1981 Meeting), (North Holland, New York 1982).Google Scholar
47. Mataré, H.F., “Defect Electronics in Semiconductors” (Wiley, New York 1971).Google Scholar
48. Bollmann, W., “Crystal Defects and Crystalline Interfaces” (Springer, Berlin 1970);CrossRefGoogle Scholar
48a Bollmann, W., Surface Sci. 31, 1 (1972).Google Scholar
49. Pantelides, S.T., Rev. Mod. Phys. 50, 797 (1978);CrossRefGoogle Scholar
49a Watkins, G.D. in: Proc.XVI thInt. Conf. Phys. Semic., Averous, M., ed. (1982), to be published.Google Scholar
50. Kirton, M.J. and Jaros, M., J. Phys.C14, 2099 (1981);Google Scholar
50a Farvacque, J.L. Ferre, D. and Lenglart, P., Int. Phys. Conf. Ser. 59, 389 (1981);Google Scholar
50b Jones, R. Öberg, S. and Marklund, S., Phil. Mag. 43, 839 (1981), also Ref. 32.Google Scholar
51. Leamy, H.J., J. Appl. Phys. 53, R51 (June 1982).Google Scholar
52. Donolato, C., Optik 52, 19 (1978), phys. stat. sol. a65, 649 (1981).Google Scholar
53. Donolato, C. and Klann, H., J. Appl. Phys. 51, 1624 (1980).CrossRefGoogle Scholar
54. Marek, J., J. Appl. Phys. 53, 1454 (1982).Google Scholar
55. Pasemann, L., phys. stat. sol. a69, K199 (1982), also Ref. 57.Google Scholar
56. Kawado, S., Jpn. J. Appl. Phys. 19, 1591 (1980).Google Scholar
57. Pasemann, L. Blumtritt, H. and Gleichmann, R., phys. stat. sol. a70,197(1982).Google Scholar
58. Castellani, L. Gondi, P. Patuelli, C. and Berti, R., phys. stat. sol. a69,677 (1982).Google Scholar
59. Booker, G.R. Ourmazd, A. and Darby, D.B., Ref. 29, p. C6–19.Google Scholar
60. Miller, G.L. Lang, D.V. and Kimerling, L.C., Ann.Rev.Mater.Sci. 7,377 (1977).Google Scholar
61. Kimerling, L.C. Patel, J.R. Benton, J.L. and Freeland, P.E., in:“Defects and Radiation Effects in Semiconductors, 1980”, Hasiguti, R.R.,ed. (Conf.Ser.59,Instit.of Physics, Bristol, 1981, p.401.Google Scholar
62. Ourmazd, A. and Booker, G.R., phys. stat. sol. a55, 771 (1979).Google Scholar
63. Petroff, P.M. and Lang, D.V., Appl. Phys. Lett. 31, 60 (1977).Google Scholar
64. Böhm, K. and Fischer, B., J. Appl. Phys. 50, 5453 (1979); also Heinke, W. and Queisser, H.J., Phys. Rev. Lett. 33, 1082 (1974).Google Scholar
65. Uebbing, R.H. Wagner, P. Baumgart, H. and Queisser, H.J., Appl. Phys.Lett. 37, 1078 (1980).CrossRefGoogle Scholar
66. Drosdov, N.A. Patrin, A.A. and Tkachev, V.D., Zh. Eksp. Theor. Fiz.Pis'ma Red. 23, 651 (1976)Google Scholar
66a [Sov. Phys. J. Exp. Theor. Lett. 23, 597(1976)].Google Scholar
67. Weber, J. Sauer, R. Weber, E.R. and Alexander, H., to be published.Google Scholar
68. Uebbing, R.H. and Merkle, K.L., (unpublished).Google Scholar
69. Steckenborn, A. Münzel, H. and Bimberg, D. Luminescence, J., 24/25, 351 (1981).Google Scholar
70. Chin, A.K. Temkin, H. and Mahajan, S., Bell.System.Tech.J. 60, 2187 (1981).Google Scholar
71. Hayashi, I., J.Phys. Soc. Jpn. Suppl. A49, 57 (1980).Google Scholar
72. Dow, J.D. and Allen, R.E., Appl. Phys. Lett. 41, 672 (1982).Google Scholar
73. Mayer, V.F. and Galligan, J.M., Appl. Phys. Lett. 40, 1020 (1982);CrossRefGoogle Scholar
73a also see Takeuchi, S. and Maeda, K., (this volume).Google Scholar
74. Kisters, K.H. and Alexander, H., ICDS–12 (Amsterdam 1982) to be published in Physica B.Google Scholar
75. Mergel, D. and Labusch, R., phys. stat. sol. a69, 151 (1982).Google Scholar
76. Pakulis, E.J. and Jeffries, C.D., Phys. Rev. Lett. 47, 1859 (1981).Google Scholar
77. Bauser, E. and Strunk, H., Thin Solid Films 93, 185 (1982).Google Scholar
78. Bauser, E. and Strunk, H., J. Crystal Growth 51, 362 (1981).Google Scholar
79. Frank, F.C., J. Crystal Growth 51, 367 (1981).Google Scholar
80. Fischer, B. Bauser, E. Sullivan, P.A. and Rode, D.L., Appl. Phys. Lett. 33,78 (1978).Google Scholar
81. Futugami, M., J. Appl. Phys. 52, 5575 (1981), also Ref. 83.Google Scholar
82. Sumino, K., in “Semiconductor Silicon 1981”, ed. by Electrochem. Soc., Princeton, p. 208; also this volume.Google Scholar
83. Jastrzebski, L., IEEE Trans. ED–29,475 (1982).Google Scholar
84. Chang, S.L. Queisser, H.J. Baumgart, H. Hagen, W. and Hartmann, W.,Phil. Mag. (in press).Google Scholar
85. Singh, S.R. and Singh, S., phys. stat. sol. b112, 51 (1982).CrossRefGoogle Scholar
86. Spence, J.C.H. (Si interfaces); Yamashita, T. and Ponce, F.A.(GaAs);this volume (1982 Mat. Res. Soc. Ann. Meeting).Google Scholar
87. Proc. Int. Conf. on Grain Boundaries, Perpignan (1982), to be published.Google Scholar
88. Seager, C.H., this volume (1982 Mat. Res. Soc. Ann. Meeting).Google Scholar
89. Werner, J. Jantsch, W. and Queisser, H.J., Solid State Commun. 42, 415(1982).Google Scholar
90. Werner, J. and Strunk, H. in Ref.86 and to be published.Google Scholar
91. Ziegler, E. Siegel, W. Blumtritt, H. and Breitenstein, O., phys. stat.sol. a72, 593 (1982).Google Scholar
92. Neugroschel, A. and Mazer, J.A., IEEE Trans. ED–29, 225 (1982).Google Scholar
93. Poon, E. and Hwang, W., Solid-St. Electronics 25, 699 (1982).Google Scholar
94. Kato, K. Ono, T. and Amemiya, Y., IEEE Trans. ED–29, 1156 (1982).Google Scholar
95. Milshtein, S., phys. stat. sol. a72, K99 (1982).Google Scholar