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Electrical Properties of Bi 3.25 La 0.75 Ti3O12 Thin Films with Various Grain Orientations Deposited by r.f. Magnetron Sputtering

Published online by Cambridge University Press:  02 August 2011

Ju Hyung Suh ,
Sang Ho Oh  and
Chan-Gyung Park
Ju Hyung Suh
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
Sang Ho Oh
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea Max-Planck-Istitut für Metallforschung, Heigenbergstrasse 3, 70569 Stuttgart, Germany
Chan-Gyung Park
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea
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Abstract

Effects of grain orientation on the electrical polarization and leakage current characteristics of Bi3.25La0.75Ti3O12 (BLT) thin films have been investigated with respect to c-axis off-alignment. The BLT thin films from epitaxially aligned along c-axis to (117) and (014) off-aligned orientations have been successfully grown by using both different electrode materials (Pt and SrRuO3) and heat-treatments. In order to evaluate the crystallinity and the film texture of various off-aligned BLT thin films, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were carried out. The BLT thin films deposited on SrRuO3/SrTiO3 (100) substrate was grown epitaxial c-axis alignment. That is, the c-axis of the film was completely parallel to the substrate normal, resulting in a cube on cube epitaxial relationship with the underlying SrRuO3 film. The corresponding P-E curve showed nearly paraelectric property. The polycrystalline (117) and (014) oriented BLT thin films revealed that remnant polarization increased remarkably due to the anisotropy of spontaneous polarization of BLT. The surface roughness of BLT thin films was increased to result in degraded leakage current characteristic. According to the present results, it can be concluded that the grain orientation of BLT thin films is a crucial factor controlling the polarization properties and leakage current characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G3.15
Copyright
Copyright © Materials Research Society 2003

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