Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T12:37:21.304Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of Batio3 thin Films Flash‐Evaporated on si and sio2/Si

Published online by Cambridge University Press:  10 February 2011

J.V. Caballero ,
R. E. Avila ,
V.M. Fuenzalida  and
I. Eisele
J.V. Caballero
Affiliation:
Physics Dept., U. de Santiago de Chile, Cas. 307‐2, Santiago, Chile, [email protected];
R. E. Avila
Affiliation:
CCHEN, Cas. 188‐D, Santiago, Chile;
V.M. Fuenzalida
Affiliation:
U. de Chile, FCFM, Santiago, Chile;
I. Eisele
Affiliation:
Univ. der Bundeswehr, W. Heisenberg Weg 39, D85577 Neubiberg, Germany.
Get access

Abstract

BaTiO3 (BT) thin films were prepared by flash evaporation onto p‐Si and SiO2/p‐Si. The films are amorphous and remain so after a thickness reduction by 20% by annealing at 500 °C for 3 min. in O2 atmosphere. The electrical characteristics were measured at room temperature.

Electron injection at the Al to BT interface of Al/BT/Si capacitors is enhanced by the Schottky effect, yielding a value of 11.2 for the dielectric constant of BT. Modeling current‐time measurements yields a trap density of 1024 m3, 0.82 eV below the conduction band. Capacitance‐voltage curve shifts due to bias stress on AI/BT/SiO2/Si capacitors are interpreted as caused by electron injection and trapping in the BT films. Starting deposition at 170 °C or post‐deposition annealing reduces the trap density and increases the C‐V curve shifts by bias stress, from 0.3 to over 14 V at bias stress of‐10 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 355
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chiou, B‐S. and Lin, M‐C., Thin Solid Films 248, 247 (1994).Google Scholar
2 Desu, Seshu B. and Yoo, In K., J. Electrochem. Soc, 140, 9 (1993)Google Scholar
3 Jia, QX, Shi, ZQ, Anderson, WA, Thin Solid Films, 209, 230 (1992).Google Scholar
4 Caballero, J. V., Fuenzalida, V.M. and Avila, RE., MRS Fall 1996 Symp. I Proc. Google Scholar
5 Lampert, MA. and Mark, P., Current injection in solids, Academic Press, New York, USA, 1970.Google Scholar
6 Sze, S.M., Pysics ofsemiconductor devices, 2nd Ed., J. Wiley & Sons (1981), Sec. 7.3.4.Google Scholar
7 Dhariwal, S.R., and Landsberg, P.T., J. Phys. Chem. Solids, 50, 363 (1989).Google Scholar
8 Groeseneken, G., and Maes, H.E.,IEEE Trans. ElectronDev., ED‐33, 1028 (1986).Google Scholar
9 Slack, J.R., and Burfoot, J.C., Phys C, Solid St. Phys., 4, 898(1971).Google Scholar
10 Shi, Z.Q., Jia, Q.X., and Anderson, W.A., J. Vac. Sci. Technol. A 10, 733 (1992).Google Scholar
11 Nicollian, E.H. and Brews, J.R., MOS (metal‐oxide‐semiconductor) physics and technology, John Willey & Sons, New York, 1982.Google Scholar
12 Simmons, J.G. and Tarn, M.C., Phys. Rev. B, 7, 3706 (1973).Google Scholar
13 Avila, R.E., Carrasco, J., Lorca, J., Silva, C., Fuenzalida, V., and Vargas, T., VI National experimental and applied physics symposium, Temuco, Chile, January 9‐12, 1996.Google Scholar