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Electrical Properties of Au/Bi4-xLaxTi3O12 Thin Film/Si Structures and Reduction of Interface States

Published online by Cambridge University Press:  26 February 2011

Atsushi Kohno  and
Hiroyuki Tomari
Atsushi Kohno
Affiliation:
[email protected], Fukuoka University, Department of Applied Physics, 8-19-1 Nanakuma, Jounan-ku, Fukuoka, N/A, 814-0180, Japan, +81-92-871-6631, +81-92-865-6030
Hiroyuki Tomari
Affiliation:
[email protected], Fukuoka Univ., Department of Applied Physics, Japan
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Abstract

Sub-100nm-Thick Polycrystalline Bi4-xLaxTi3O12 (BLT) thin films have been formed on silicon substrates by sol-gel and spin-coating techniques. The analysis of X-ray reflectivity for the BLT/Si structure showed that the BLT film density was slightly lower than the ideal value and the interfacial layer was formed. By Fourier transform infrared spectroscopy (FT-IR) it is confirmed that the formation of the interfacial layer was due to oxidation of Si. Clockwise hysteresis was observed in capacitance-voltage (C-V) characteristics for Au/BLT/p-Si structures at a frequency range between 1 MHz – 1 kHz. The frequency dispersion of the C-V curve was caused by a large amount of interface states at BLT/Si interface. As the film was crystallized at 550°C for 2 h the maximum interface state density was ∼3.4×1011 cm-2ev-1 at 1 kHz. Also, the negative gate-voltage shift of the C-V curve from the ideal curve and the gate-bias dependence of the flat-band voltage were observed, resulting in the presence of undesirable positive charges in the film and the electron injection to the traps near the BLT/Si interface. By post-annealing of the device at 400 °C in oxygen atmosphere the interface states (fast sates) were successfully reduced to a third of the initial value and also the positive charges were significantly diminished.

Keywords

ferroelectricfilmelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-45
Copyright
Copyright © Materials Research Society 2006

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References

1 Wu, S. Y., IEEE Trans. Electron Devices, ED-21, 499–504(1974).Google Scholar
2 Matsui, Y., Okuyama, M., Noda, M. and Hamakawa, Y., Appl. Phys. A28, 161–166 (1982).Google Scholar
3 Fu, L., Liu, K., Zhang, B., Chu, J., Wang, H., and Wang, M., Appl. Phys. Lett. 72, 1784–1786 (1998).Google Scholar
4 Choi, T., Kim, Y. S., Yang, C. W., and Lee, J., Appl. Phys. Lett. 79, 1516–1518 (2001).Google Scholar
5 Kijima, T., Fujisaki, Y. and Ishiwara, H., Jpn. J. Appl. Phys. 40, 2977–2982 (2001).Google Scholar
6 Rokuta, E., Hotta, Y., Kubota, T., Tabata, H., Kobayashi, H., and Kawai, T., Appl. Phys. Lett. 79, 403–405 (2001).Google Scholar
7 Sun, C.L., Chen, S.Y., Chen, S.B., and Chin, A., Appl. Phys. Lett. 80, 1984–1986 (2002).Google Scholar
8 Aizawa, K., Park, B.E., Kawashima, Y., Takahasi, K., and Ishiwara, H., Appl. Phys. Lett. 85, 3199–3201 (2004).Google Scholar
9 Takahashi, K., Aizawa, K., Park, B.E., and Ishiwara, H., Jpn. J. Appl. Phys. 44, 6218–6220 (2005).Google Scholar
10 Kohno, A., Ishitsu, F., Matuo, K., and Tomari, H., Mat. Res. Soc. Symp. Proc. 784, 497–502 (2004).Google Scholar
11 Park, B.H., Kang, B.S., Bu, S.D., Noh, T.W., Lee, J., and Jo, W., Nature 401, 682–684 (1999).Google Scholar
12 Chon, U., Yi, G.C. and Jang, H. M., Appl. Phys. Lett. 78, 658–660 (2001).Google Scholar
13 Sun, Y.M., Chen, Y.C., Gan, J.Y., and Hwang, J.C., Appl. Phys. Lett. 81, 3221–3223 (2002).Google Scholar
14 Hou, Y., Xu, X.H., Wang, H., Wang, M., and Shang, S.X., Appl. Phys. Lett. 78, 1733–1735 (2001).Google Scholar
15 Rae, B. A., Thompson, J. G., Withers, R. L., and Willis, A. C., Acta. Cryst. B46, 474–487 (1990).Google Scholar
16 Terman, L. M., Solid-States Electronics 5, 285–299 (1962).Google Scholar