Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T18:49:25.124Z Has data issue: false hasContentIssue false

Electrical Properties of Ag-In-(Yb,Ca) Quasicrystals and Their Approximants

Published online by Cambridge University Press:  01 February 2011

Daisuke Tetsuka
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, Noda, Chiba 278–8510, Japan
Ryuji Tamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, Noda, Chiba 278–8510, Japan
Shin Takeuchi
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, Noda, Chiba 278–8510, Japan
Get access

Abstract

We report the electrical resistivity of the ternary Ag-In-(Yb,Ca) quasicrystals (QCs) together with those of their 1/1 and 2/1 cubic approximants. The temperature coefficient of the resistivity (TCR) is negative and nearly the same for the QCs and the 2/1 approximants suggesting that the coherence length of the conduction electrons in the QCs is comparable to the lattice parameter of the 2/1 approximants, i.e., ∼2.5 nm. On the other hand, both positive and negative values of TCR are observed for the 1/1 approximants depending on the annealing temperature. Taking into consideration the occurrence of positive TCR in the binary Cd-(Yb,Ca) 1/1 approximant, the latter phenomenon suggests that the negative TCR of the ternary 1/1 approximants is due to chemical disorder between Ag and In, and the chemical disorder is possibly reduced when annealed at low temperatures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Guo, J. Q. and Tsai, A. P., Phil. Mag. Lett. 82 (2002) 349.Google Scholar
2. Tsai, A. P., Guo, J. Q., Abe, E., Takakura, H. and Sato, T. J., Nature (London) 408 (2000) 537.Google Scholar
3. Guo, J. Q., Abe, E. and Tsai, A. P., Phys. Rev. B 62 (2000) R14605.Google Scholar
4. Tamura, R., Araki, T. and Takeuchi, S., Phys. Rev. Lett. 90 (2003) 226401.Google Scholar
5. Tamura, R., Murao, Y., Takeuchi, S., Tokiwa, K., Watanabe, T., Sato, T. J. and Tsai, A. P., Jap. J. Appl. Phys. 40 (2001) L912.Google Scholar
6. Shibuya, T., Edagawa, K. and Takeuchi, S.: Proc. Int. Conf. ICQ6, ed. Takeuchi, By S. and Fujiwara, T., (Singapore, World Scientific, 1997) p. 700703.Google Scholar
7. Tamura, R., Asao, T. and Takeuchi, S., Mater. Trans. 42 (2001) 928.Google Scholar