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Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

Published online by Cambridge University Press:  25 February 2011

M.O. Aboelfotoh
M.O. Aboelfotoh*
Affiliation:
IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

The electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 3
Copyright
Copyright © Materials Research Society 1990

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